FQT1N80

FQT1N80 N-Channel MOSFET November 2007 QFET FQT1N80 N-Channel MOSFET 800V, 0.2A, 20Ω Features RDS(on) = 15.5Ω (Typ.)@ VGS = 10V, ID = 0.1A Low gate charge ( Typ. 5.5nC) Low Crss ( Typ. 2.7pF) Fast switching 100% avalanche tested Improved dv/dt capability RoHS compliant ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D D S G G SOT-223 FQT Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation - Derate above 25oC (TC = 25oC) -Continuous (TC = 25oC) - Pulsed -Continuous (TC = 100oC) (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) FQT1N80 800 ±30 0.2 0.12 0.8 90 0.2 0.2 4.0 2.1 0.02 -55 to +150 300 Units V V A A mJ A mJ V/ns W W/oC oC oC Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Sy...