FQT1N80TF_WS N-Channel MOSFET
August 2011
QFET
FQT1N80TF_WS
N-Channel MOSFET
800V, 0.2A, 20Ω Features
• RDS(on) = 15.5...
FQT1N80TF_WS N-Channel MOSFET
August 2011
QFET
FQT1N80TF_WS
N-Channel MOSFET
800V, 0.2A, 20Ω Features
RDS(on) = 15.5Ω (Typ.)@ VGS = 10V, ID = 0.1A Low gate charge ( Typ. 5.5nC) Low Crss ( Typ. 2.7pF) Fast switching 100% avalanche tested Improved dv/dt capability RoHS compliant
®
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
D D
S G
G
SOT-223
FQT Series
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) FQT1N80TF_WS 800 ±30 0.2 0.12 0.8 90 0.2 0.2 4.0 2.1 0.02 -55 to +150 300 Units V V A A mJ A mJ V/ns W W/oC
oC o
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds
C
Thermal Cha...