Mos-Tech Semiconductor Co.,LTD.
MT4435L2
P-Channel Enhancement Mode Field Effect Transistor FEATURES
● ● ● ●
Super h...
Mos-Tech Semiconductor Co.,LTD.
MT4435L2
P-Channel Enhancement Mode Field Effect
Transistor FEATURES
● ● ● ●
Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement TO-252 package
PRODUCT SUMMARY
VDSS -30V
ID -7A
RDS(ON) (mΩ) Typ 98@ VGS=-10V 130 @ VGS=-4.5V
D
S
NOTE:The MT4435L2 is available in a lead-free package
G
G
S
D
ABSOLUTE MAXIMUM RATINGS(TA=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousª@Tj=125℃ - Pulse d b Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range
Symbol
VDS VGS ID IDM IS PD TJ,TSTG
Limit
-30 ±20 -7 -24 -1.8 50 -55 to 150
Unit
V V A A A W ℃
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to Ambientª Rth JA 50 ℃/W
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Free Datasheet http://www.datasheet4u.com/
Mos-Tech Semiconductor Co.,LTD.
MT4435L2
ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
Parameter
OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage
ON CHARACTERITICS
Symbol
Condition
Min
Typ
Max
Unit
BVDSS IDSS IGSS
VGS=0V,ID=-250µA VDS=-24V,VGS=0V VGS=±20V,VDS=0V
-30 -1 ±100
V µA nA
Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance DAYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISISTICS Turn-On Delay Time Ri...