MT4435

MT4435 P- Channel Enhancement Mode MOSFET ‹ DESCRIPTION The MT4435 MOSFET from MATRIX provide the designer with the best combination of fast switching, Buggerized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. ‹ ¾ ¾ ¾ ¾ ¾ FEATURES -30V/-8A, RDS(ON) = 20mΩ @ VGS = -10V SO-8 package design Simple Drive Requirement Low On-resistance Fast Switching ‹ ¾ ¾ ¾ ¾ ¾ APPLICATIONS POWER Management in Note Portable Equipment Battery Powered System DC/DC Converter Load Switch ‹ PIN CONFIGURATION ‹ ABSOLUTE MAXIMUM RATINGS Parameter Symbol VDS VGS TA=25 OC TA=70 C O (TA=25℃ Unless Otherwise Noted) Maximum -30 ±20 -8 -6 -50 2.5 0.02 Unit V V A A W W/ OC O Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Pulsed Drain Current1.2 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range -1TA=25 OC ID IDM PD TSTG TJ -55 to 150 - 55 to 150 C/ C O www.matrix-microtech.com.tw Free Datasheet http://www.datasheet4u.com/ MT4435 P- Channel Enhancement Mode MOSFET ‹ THERMAL RESISTANCE RATINGS Thermal Resistance Thermal Resistance Junction-ambient Symbol Rthj-a Maximum 50 Unit O C/W ‹ ELECTRICAL CHARACTERISTICS Parameter Symbol Test Conditions Min. Typ. Max. Unit (TA=25℃ Unless Otherwise Noted) Static Parameters Drain-Source Breakdown Volt...