MOSFET. ICE11N70FP Datasheet

ICE11N70FP Datasheet PDF


Part

ICE11N70FP

Description

N-Channel Enhancement Mode MOSFET

Manufacture

Icemos

Page 9 Pages
Datasheet
Download ICE11N70FP Datasheet


ICE11N70FP Datasheet
Preliminary Data Sheet
ICE11N70FP
ICE11N70FP N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on)
• Ultra Low Gate Charge
• High dv/dt capability
• High Unclamped Inductive Switching (UIS) capability
• High peak current capability
• Increased transconductance performance
• Optimized design for high performance power systems
HALOGEN
FREE
ID
V(BR)DSS
rDS(on)
Qg
Product Summary
TA=25oC
ID=250uA
VGS=10V
VDS=480V
11A
700V
0.20Ω
85nC
D
G
S
Max
Min
Typ
Typ
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS
FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20
YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
Maximum ratings b , at Tj=25°C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
ID Tc=25oC
Pulsed drain current
ID, pulse
Tc=25oC
Avalanche energy, single pulse
E AS
ID=7.5A
Avalanche current, repetitive
I AR limited by Tjmax
MOSFET dv/dt ruggedness
dv/dt
VDS=480V, ID=11A,
Tj=125oC
Gate source voltage
Static
VGS
AC (f>1Hz)
T0220 Full-PAK
Isolated (T0-220)
1=Gate, 2=Drain,
3=Source
Value
11
33
280
7.5
50
±20
±30
Unit
A
A
mJ
A
V/ns
V
Power dissipation
Operating and storage temperature
Mounting torque
Ptot
Tj, Tstg
Tc=25°C
M 3 & 3.5 screws
108
-55 to +150
60
W
°C
Ncm
a When mounted on 1inch square 2oz copper clad FR-4
b Preliminary Data Sheet Specifications subject to change
SP-11N70FP-000-6
07/17/2013
Free Datasheet http://www.datasheet41u.com/

ICE11N70FP Datasheet
Preliminary Data Sheet
ICE11N70FP
Parameter
Symbol
Conditions
Thermal characteristics
Thermal resistance, junction-
case a
RthJC
Thermal resistance, junction-
ambient a
RthJA
Soldering temperature, wave
soldering only allowed at leads
T sold
leaded
1.6mm (0.063in.) from
case for 10 s
Values
Unit
Min Typ Max
- - 0.6
°C/W
- - 62
- - 260 °C
Electrical characteristics b , at Tj=25°C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS
Gate threshold voltage
VGS(th)
Zero gate voltage drain current IDSS
Gate source leakage current
Drain-source
on-state resistance
IGSS
RDS (on)
VGS=0 V, ID=250µA
VDS=VGS, ID=250µA
VDS=700V, VGS=0V,
Tj=25°C
VDS=700V, VGS=0V,
Tj=150°C
VGS=±20 V, VDS=0V
VGS=10V, ID=5.5A,
Tj=25°C
VGS=10V, ID=5.5A,
Tj=150°C
700 740 -
2.5 3 3.5
- 0.1 1
- - 100
- - 100
- 0.20 0.25
- 0.53 -
Gate resistance
RG f=1 MHZ, open drain
- 4.3 -
V
µA
nA
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Transconductance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Ciss
Coss
Crss
gfs
td(on)
tr
td(off)
tf
VGS=0 V, VDS=25 V,
f=1 MHz
VDS>2*ID*RDS, ID=5.5A
VDS=380V, VGS=10V,
ID=11A, RG=4(External)
-
-
-
-
-
-
-
-
2750
980
25
19
39
3.5
55
7
-
-
-
-
-
-
-
-
pF
S
ns
SP-11N70FP-000-6
07/17/2013
Free Datasheet http://www.datasheet42u.com/


Features Datasheet pdf Preliminary Data Sheet ICE11N70FP ICE11 N70FP N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductan ce performance • Optimized design for high performance power systems HALOGEN Product Summary ID V(BR)DSS rDS(on) F REE TA=25oC ID=250uA VGS=10V VDS=480V D 11A 700V 0.20Ω 85nC Max Min Typ Ty p Qg G S ICEMOS AND ITS SISTER COMPA NY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS O F REMAINING LIFE. THIS PORTFOLIO HAS GR ANTED PATENTS ISSUED IN USA, CHINA, KOR EA, JAPAN, TAIWAN & EUROPE. T0220 Full -PAK Isolated (T0-220) 1=Gate, 2=Drain, 3=Source Maximum ratings b Parameter , at Tj=25°C, unless otherwise specif ied Symbol Conditions Value Unit Conti nuous drain current Pulsed drain curren t Avalanche energy, single pulse Avalanche current, repetitive MOSFET dv/dt rug.
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