Mode MOSFET. ICE13N65FP Datasheet

ICE13N65FP Datasheet PDF, Equivalent


Part Number

ICE13N65FP

Description

N-Channel Enhancement Mode MOSFET

Manufacture

Icemos

Total Page 9 Pages
PDF Download
Download ICE13N65FP Datasheet PDF


ICE13N65FP Datasheet
Preliminary Data Sheet
ICE13N65FP
ICE13N65FP N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on)
• Ultra Low Gate Charge
• High dv/dt capability
• High Unclamped Inductive Switching (UIS) capability
• High peak current capability
• Increased transconductance performance
• Optimized design for high performance power systems
HALOGEN
FREE
ID
V(BR)DSS
rDS(on)
Qg
Product Summary
TA=25oC
ID=250uA
VGS=10V
VDS=480V
13A
650V
0.25Ω
59nC
D
G
S
Max
Min
Typ
Typ
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS
FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20
YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
T0220 Full-PAK
Isolated (T0-220)
Maximum ratings b , at Tj=25oC, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
ID
ID, pulse
E AS
Tc=25oC
Tc=25oC
ID=6.5A
Avalanche current, repetitive
I AR limited by Tjmax
MOSFET dv/dt ruggedness
dv/dt
VDS=480V, ID=13A,
Tj=125oC
Gate source voltage
Static
VGS
AC (f>1Hz)
Power dissipation
Ptot Tc=25oC
Operating and storage temperature
Tj, Tstg
Mounting torque
M 2.5 screws
a When mounted on 1inch square 2oz copper clad FR-4
b Preliminary Data Sheet Specifications subject to change
Value
13
39
460
6.5
Unit
A
A
mJ
A
50 V/ns
±20
±30
35
-55 to +150
50
V
W
oC
Ncm
SP-13N65FP-000-2a
06/05/2013
Free Datasheet http://www.datasheet41u.com/

ICE13N65FP Datasheet
Preliminary Data Sheet
ICE13N65FP
Parameter
Symbol
Conditions
Thermal characteristics
Thermal resistance, junction-
case a
RthJC
Thermal resistance, junction-
ambient a
RthJA
Soldering temperature, wave
soldering only allowed at leads
T sold
leaded
1.6mm (0.063in.) from
case for 10 s
Values
Unit
Min Typ Max
- - 3.5
oC/W
- - 80
- - 260 oC
Electrical characteristics b , at Tj=25oC, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS
Gate threshold voltage
VGS(th)
Zero gate voltage drain current IDSS
Gate source leakage current
Drain-source
on-state resistance
IGSS
RDS (on)
VGS=0 V, ID=250µA
VDS=VGS, ID=250µA
VDS=650V, VGS=0V,
Tj=25oC
VDS=650V, VGS=0V,
Tj=150oC
VGS=±20 V, VDS=0V
VGS=10V, ID=6.5A,
Tj=25oC
VGS=10V, ID=6.5A,
Tj=150oC
650
2.1
-
-
-
-
-
Gate resistance
RG f=1 MHZ, open drain
-
675 -
- 3.9
0.1 1
- 100
- 100
0.25 0.28
0.62 -
4.7 -
V
µA
nA
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Transconductance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Ciss
Coss
Crss
gfs
td(on)
tr
td(off)
tf
VGS=0 V, VDS=25 V,
f=1 MHz
VDS>2*ID*RDS, ID=6.5A
VDS=380V, VGS=10V,
ID=13A, RG=4(External)
-
-
-
-
-
-
-
-
1800
600
5
15
39
10
55
6
-
-
-
-
-
-
-
-
pF
S
ns
SP-13N65FP-000-2a
06/05/2013
Free Datasheet http://www.datasheet42u.com/


Features Datasheet pdf Preliminary Data Sheet ICE13N65FP ICE13 N65FP N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductan ce performance • Optimized design for high performance power systems HALOGEN Product Summary ID V(BR)DSS rDS(on) F REE TA=25oC ID=250uA VGS=10V VDS=480V D 13A 650V 0.25Ω 59nC Max Min Typ Ty p Qg G S ICEMOS AND ITS SISTER COMPA NY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS O F REMAINING LIFE. THIS PORTFOLIO HAS GR ANTED PATENTS ISSUED IN USA, CHINA, KOR EA, JAPAN, TAIWAN & EUROPE. T0220 Full -PAK Isolated (T0-220) Maximum ratings b Parameter , at Tj=25oC, unless othe rwise specified Symbol Conditions Value Unit Continuous drain current Pulsed drain current Avalanche energy, single pulse ID ID, pulse E AS Tc=25oC Tc=25oC ID=6.5A 13 39 460 A A mJ Avalanch.
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