(PDF) ICE15N65 Datasheet PDF | Icemos





ICE15N65 Datasheet PDF

Part Number ICE15N65
Description N-Channel Enhancement Mode MOSFET
Manufacture Icemos
Total Page 9 Pages
PDF Download Download ICE15N65 Datasheet PDF

Features: Datasheet pdf Preliminary Data Sheet ICE15N65 ICE15N6 5 N-Channel Enhancement Mode MOSFET Fea tures • Low rDS(on) • Ultra Low Gat e Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS ) capability • High peak current capa bility • Increased transconductance p erformance • Optimized design for hig h performance power systems HALOGEN Pr oduct Summary ID V(BR)DSS rDS(on) FREE TA=25oC ID=250uA VGS=10V VDS=480V D 1 5A 650V 0.25Ω 59nC Max Min Typ Typ Q g G S T0220 ICEMOS AND ITS SISTER CO MPANY 3D SEMI OWN THE FUNDAMENTAL PATEN TS FOR SUPERJUNCTION MOSFETS. THE MAJOR ITY OF THESE PATENTS HAVE 17 to 20 YEAR S OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE. Standar d Metal Heatsink 1=Gate, 2=Drain, 3=Sou rce. Maximum ratings b Parameter , at Tj=25oC, unless otherwise specified Sy mbol Conditions Value Unit Continuous drain current Pulsed drain current Aval anche energy, single pulse ID ID, pulse E AS Tc=25oC Tc=25oC ID=7.5A 15 45 .

Keywords: ICE15N65, datasheet, pdf, Icemos, N-Channel, Enhancement, Mode, MOSFET, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

ICE15N65 datasheet
Preliminary Data Sheet
ICE15N65
ICE15N65 N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on)
• Ultra Low Gate Charge
• High dv/dt capability
• High Unclamped Inductive Switching (UIS) capability
• High peak current capability
• Increased transconductance performance
• Optimized design for high performance power systems
HALOGEN
FREE
ID
V(BR)DSS
rDS(on)
Qg
Product Summary
TA=25oC
ID=250uA
VGS=10V
VDS=480V
15A
650V
0.25Ω
59nC
D
Max
Min
Typ
Typ
G
S
T0220
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS
FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20
YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
Standard Metal
Heatsink
1=Gate, 2=Drain,
3=Source.
Maximum ratings b , at Tj=25oC, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
ID
ID, pulse
E AS
Tc=25oC
Tc=25oC
ID=7.5A
Avalanche current, repetitive
I AR limited by Tjmax
MOSFET dv/dt ruggedness
dv/dt
VDS=480V, ID=15A,
Tj=125oC
Gate source voltage
Static
VGS
AC (f>1Hz)
Power dissipation
Ptot Tc=25oC
Operating and storage temperature
Tj, Tstg
Mounting torque
M 3 & 3.5 screws
a When mounted on 1inch square 2oz copper clad FR-4
b Preliminary Data Sheet Specifications subject to change
Value
15
45
460
7.5
Unit
A
A
mJ
A
50 V/ns
±20
±30
160
-55 to +150
60
V
W
oC
Ncm
SP-15N65-000-3a
06/05/2013
Free Datasheet http://www.datasheet41u.com/

ICE15N65 datasheet
Preliminary Data Sheet
ICE15N65
Parameter
Symbol
Conditions
Thermal characteristics
Thermal resistance, junction-
case a
RthJC
Thermal resistance, junction-
ambient a
RthJA
Soldering temperature, wave
soldering only allowed at leads
T sold
leaded
1.6mm (0.063in.) from
case for 10 s
Values
Unit
Min Typ Max
- - 0.8
oC/W
- - 62
- - 260 oC
Electrical characteristics b , at Tj=25oC, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS
Gate threshold voltage
VGS(th)
Zero gate voltage drain current IDSS
Gate source leakage current
Drain-source
on-state resistance
IGSS
RDS (on)
VGS=0 V, ID=250µA
VDS=VGS, ID=250µA
VDS=650V, VGS=0V,
Tj=25oC
VDS=650V, VGS=0V,
Tj=150oC
VGS=±20 V, VDS=0V
VGS=10V, ID=7.5A,
Tj=25oC
VGS=10V, ID=7.5A,
Tj=150oC
650
2.1
-
-
-
-
-
Gate resistance
RG f=1 MHZ, open drain
-
675 -
- 3.9
0.1 1
- 100
- 100
0.25 0.28
0.62 -
4.7 -
V
µA
nA
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Transconductance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Ciss
Coss
Crss
gfs
td(on)
tr
td(off)
tf
VGS=0 V, VDS=25 V,
f=1 MHz
VDS>2*ID*RDS, ID=7.5A
VDS=380V, VGS=10V,
ID=15A, RG=4(External)
-
-
-
-
-
-
-
-
1800
600
5
15
39
10
55
6
-
-
-
-
-
-
-
-
pF
S
ns
SP-15N65-000-3a
06/05/2013
Free Datasheet http://www.datasheet42u.com/





Index : 0  1  2  3   4  5  6  7   8  9  A  B   C  D  E  F   G  H  I  J   K  L  M  N   O  P  Q  R   S  T  U  V   W  X  Y  Z
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)