DatasheetsPDF.com

ICE15N65FP Dataheets PDF



Part Number ICE15N65FP
Manufacturers Icemos
Logo Icemos
Description N-Channel Enhancement Mode MOSFET
Datasheet ICE15N65FP DatasheetICE15N65FP Datasheet (PDF)

Preliminary Data Sheet ICE15N65FP ICE15N65FP N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductance performance • Optimized design for high performance power systems HALOGEN Product Summary ID V(BR)DSS rDS(on) FREE TA=25oC ID=250uA VGS=10V VDS=480V D 15A 650V 0.25Ω 59nC Max Min Typ Typ Qg G S ICEMOS AND ITS SISTER COMPANY 3D S.

  ICE15N65FP   ICE15N65FP


Document
Preliminary Data Sheet ICE15N65FP ICE15N65FP N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductance performance • Optimized design for high performance power systems HALOGEN Product Summary ID V(BR)DSS rDS(on) FREE TA=25oC ID=250uA VGS=10V VDS=480V D 15A 650V 0.25Ω 59nC Max Min Typ Typ Qg G S ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE. T0220 Full-PAK Isolated (T0-220) Maximum ratings b Parameter , at Tj=25oC, unless otherwise specified Symbol Conditions Value Unit Continuous drain current Pulsed drain current Avalanche energy, single pulse ID ID, pulse E AS Tc=25oC Tc=25oC ID=7.5A 15 45 460 A A mJ Avalanche current, repetitive MOSFET dv/dt ruggedness Gate source voltage Power dissipation Operating and storage temperature Mounting torque a When mounted on 1inch square 2oz copper clad FR-4 I AR dv/dt limited by Tjmax VDS=480V, ID=15A, Tj=125oC Static AC (f>1Hz) Tc=25oC 7.5 50 ±20 ±30 35 -55 to +150 A V/ns VGS Ptot Tj, Tstg V W o C M 2.5 screws 50 Ncm b Preliminary Data Sheet – Specifications subject to change SP-15N65FP-000-2a 06/05/2013 Free Datasheet http://www.datasheet4u.com/ 1 Preliminary Data Sheet ICE15N65FP Parameter Thermal characteristics Thermal resistance, junctioncase a Thermal resistance, junctionambient a Soldering temperature, wave soldering only allowed at leads RthJC RthJA T sold leaded 1.6mm (0.063in.) from case for 10 s 3.5 o Symbol Conditions Values Min Typ Max Unit C/W 80 260 o C Electrical characteristics b , at T =25oC, unless otherwise specified j Static characteristics Drain-source breakdown voltage V(BR)DSS VGS(th) Gate threshold voltage VGS=0 V, ID=250µA VDS=VGS, ID=250µA VDS=650V, VGS=0V, o Tj=25 C VDS=650V, VGS=0V, o Tj=150 C VGS=±20 V, VDS=0V VGS=10V, ID=7.5A, o Tj=25 C VGS=10V, ID=7.5A, o Tj=150 C f=1 MHZ, open drain 650 2.1 - 675 0.1 3.9 1 V Zero gate voltage drain current IDSS µA - 0.25 0.62 4.7 100 100 0.28 Ω Ω nA Gate source leakage current Drain-source on-state resistance Gate resistance Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance IGSS RDS (on) RG Ciss Coss Crss gfs td(on) tr td(off) tf VGS=0 V, VDS=25 V, f=1 MHz - 1800 600 pF VDS>2*ID*RDS, ID=7.5A VDS=380V, VGS=10V, ID=15A, RG=4Ω (External) - 5 15 39 10 55 6 ns Transconductance Turn-on delay time Rise time Turn-off delay time Fall time S SP-15N65FP-000-2a 06/05/2013 Free Datasheet http://www.datasheet4u.com/ 2 Preliminary Data Sheet ICE15N65FP Parameter Gate charge characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current VSD trr Qrr Irm VGS=0V, IS=IF 0.9 400 6 35 1.2 V ns µC A Qgs Qgd Qg Vplateau VDS=480 V, ID=15A, VGS=0 to 10 V 11 18 59 5.5 V nC Symbol Conditions Values Min Typ Max Unit VRR=480V, IS=IF, diFIdt=100 A/µS - SP-15N65FP-000-2a 06/05/2013 Free Datasheet http://www.datasheet4u.com/ 3 Preliminary Data Sheet ICE15N65FP Output Characteristics 45 VGS=10V Transfer Characteristics 45 40 ID - Drain Current (A) 40 ID - Drain Current (A) 35 30 25 20 15 5V 6V 7V 35 30 25 20 15 10 5 0 TJ = 150˚C 25˚C 10 5 0 0 3 6 9 12 VDS - Drain-to-Source Voltage (V) 15 0 2 4 6 8 VGS - Gate-to-Source (V) 10 On Resistance vs Drain Current 600 RDS(on) - On-State Resistance (mΩ) RDS(on) - On State Resistance (Normalized) 500 400 On Resistance vs Junction Temperature 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 VGS = 10V ID = 7.5A 300 200 100 0 0 5 10 VGS = 10V 15 20 25 30 ID - Drain current (A) 35 40 45 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (˚C) Gate Charge 10 VGS - Gate-to-Source Voltage (V) VGS(th) - Gate Threshold Voltage (Normalized) 9 8 7 6 5 VDS = 480V ID = 15A Gate Threshold Voltage vs Junction Temperature 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 -50 -25 0 25 50 75 100 125 150 ID = 250μA 4 3 2 1 0 0 20 40 60 Qg - Total Gate Charge (nC) TJ - Junction Temperature (˚C) SP-15N65FP-000-2a 06/05/2013 Free Datasheet http://www.datasheet4u.com/ 4 Preliminary Data Sheet ICE15N65FP Capacitance 100000 V(BR)DSS - Drain-to-Source Breakdown Voltage (Normalized) Drain-to-Source Breakdown Voltage vs. Junction Temperature 1.2 10000 C-Capacitance (pF) Ciss 1.1 ID = 1mA 1000 1.0 100 Coss 0.9 10 Crss 1 0 100 200 300 400 500 VDS - Drain-to-Source Voltage (V) 600 0.8 -50 -25 0 25 50 75 100 TJ - Junction Temperature (˚C) 125 150 Maximum Rated Forward Biased Safe Operating Area 100 r(t), Transient Thermal Resistance (Normalized) Single Pulse, Tc = 25oC, Tj=.


ICE15N65 ICE15N65FP ICE17N60


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)