ICE20N170FP Datasheet PDF


Part Number

ICE20N170FP

Description

N-Channel Enhancement Mode MOSFET

Manufacture

Icemos

Total Page 9 Pages
PDF Download
Download ICE20N170FP Datasheet PDF


Features Datasheet pdf Preliminary Data Sheet ICE20N170FP ICE2 0N170FP N-Channel Enhancement Mode MOSF ET Features • Low rDS(on) • Ultra L ow Gate Charge • High dv/dt capabilit y • High Unclamped Inductive Switchin g (UIS) capability • High peak curren t capability • Increased transconduct ance performance • Optimized design f or high performance power systems HALOG EN Product Summary ID V(BR)DSS rDS(on) FREE TA=25oC ID=250uA VGS=10V VDS=480 V D 20A 600V 0.17Ω 62nC Max Min Typ Typ Qg G S ICEMOS AND ITS SISTER COM PANY 3D SEMI OWN THE FUNDAMENTAL PATENT S FOR SUPERJUNCTION MOSFETS. THE MAJORI TY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN,.
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ICE20N170FP Datasheet
Preliminary Data Sheet
ICE20N170FP
ICE20N170FP N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on)
• Ultra Low Gate Charge
• High dv/dt capability
• High Unclamped Inductive Switching (UIS) capability
• High peak current capability
• Increased transconductance performance
• Optimized design for high performance power systems
HALOGEN
FREE
ID
V(BR)DSS
rDS(on)
Qg
Product Summary
TA=25oC
ID=250uA
VGS=10V
VDS=480V
20A
600V
0.17Ω
62nC
D
G
S
Max
Min
Typ
Typ
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS
FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20
YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
Maximum ratings b , at Tj=25oC, unless otherwise specified
T0220 Full-PAK
Isolated (T0-220)
1=Gate, 2=Drain,
3=Source
Parameter
Symbol
Conditions
Value
Unit
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
ID
ID, pulse
E AS
Tc=25oC
Tc=25oC
ID=10A
20 A
62 A
520 mJ
Avalanche current, repetitive
I AR limited by Tjmax
20
A
MOSFET dv/dt ruggedness
dv/dt
VDS=480V, ID=20A,
Tj=125oC
50
V/ns
Gate source voltage
Static
VGS
AC (f>1Hz)
±20
±30
V
Power dissipation
Operating and storage temperature
Mounting torque
Ptot
Tj, Tstg
Tc=25oC
M 2.5 screws
35
-55 to +150
50
W
oC
Ncm
a When mounted on 1inch square 2oz copper clad FR-4
b Preliminary Data Sheet Specifications subject to change
SP-20N170FP-000-4
05/15/2013
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