N-Channel Enhancement Mode MOSFET
Preliminary Data Sheet
ICE35N60W ICE35N60W N-Channel
Enhancement Mode MOSFET
Features
• TO247 package • Low rDS(on) • U...
Description
Preliminary Data Sheet
ICE35N60W ICE35N60W N-Channel
Enhancement Mode MOSFET
Features
TO247 package Low rDS(on) Ultra Low Gate Charge High dv/dt capability High Unclamped Inductive Switching (UIS) capability High peak current capability Increased transconductance performance Optimized design for high performance power systems
HALOGEN
Product Summary ID V(BR)DSS rDS(on)
FREE
TA=25oC ID=250uA VGS=10V VDS=480V
D
35A 600V 0.075Ω 187nC
Max Min Typ Typ
Qg
G S
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
TO247 1:G, 2:D, 3:S, 4:D, (TO-247)
Maximum ratings b
Parameter
, at Tj=25oC, unless otherwise specified Symbol Conditions Value Unit
Continuous drain current
Pulsed drain current Avalanche energy, single pulse
ID
ID, pulse E AS
Tc=25oC
Tc=25oC ID=18A
35
103 1100
A
A mJ
Avalanche current, repetitive
MOSFET dv/dt ruggedness Gate source voltage Power dissipation Operating and storage temperature Mounting torque
a When mounted on 1inch square 2oz copper clad FR-4
I AR
dv/dt
limited by Tjmax
VDS=480V, ID=35A, Tj=125oC Static AC (f>1Hz) Tc=25oC
18
50 ±20 ±30 313 -55 to +150
A
V/ns
VGS Ptot Tj, Tstg
V W
o
C
M 3 & 3.5 screws
60
Ncm
b Preliminary Data Sheet – Specifications subject to change
SP-35N60W-000-3 05/15/2013
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