Switching diode
UMN10N
Diodes
Switching diode
UMN10N
zApplications Very fast recovery zExternal dimensions (Unit : mm)
2.0±0.1 Each le ...
Description
UMN10N
Diodes
Switching diode
UMN10N
zApplications Very fast recovery zExternal dimensions (Unit : mm)
2.0±0.1 Each le ad same dimen sio n 0.25 +0.1 リードとも -0.05 (6) (5) (4) 0.15 -0.06
+0.1
zLand size figure
0.65 0.65
0.1~0.4
zFeatures 1) Small mold type. (UMD6) 2) High reliability
1.25±0.1
2.1±0.1
0~0.1
0.9
(1)
(2)
(3)
0.35
UMD6
0.65 0.65 1.3±0.1
0.7±0.1 0.9±0.1
0.2±0.1
0.7±0.1
zConstruction Silicon epitaxial planer
zStructure
ROHM : UMD6 JEDEC : SOT-363 JEITA : SC-88 dot (year week factory)
zTaping dimensions (Unit : mm)
4.0±0.1 2.0±0.05 φ1.55±0.1 0 1.75±0.1 0.3±0.1
0~0.1
3.5±0.05
2.45±0.1
8.0±0.2
2.2±0.1
4.0±0.1
2.0±0.05
φ1.1±0.1 1.35±0.1
zAbsolute maximum ratings (Ta=25°C)
Param eter Revers e voltage (repetitive peak) Revers e voltage (DC) Forward current repetitive peak (Single) Average rectified forward current (Single) Surge current ( t=1us ) Power dis s ipation Junction tem perature Storage tem perature Sym bol VRM VR IFM Io Isurg e Pd Tj Ts tg Lim its 80 80 300 100 4 200 150 -55 to +150 Unit V V mA mA A mW ℃ ℃
zElectrical characteristic (Ta=25°C)
Param eter Forward voltage Revers e current Capacitance between term inal Revers e recovery tim e Sym bol VF IR Ct trr Min. Typ. Max. 1.2 0.1 3.5 4 Unit V µA pF ns IF =100m A VR =70V VR =6V , f=1MHz VR =6V , IF=5m A , RL=50 Ω Conditions
2.4±0.1
1.6
1/3
Free Datasheet http://www.datasheet4u.com/
UMN10N
Diodes
zElectrical characteristic curves
Ta=150℃ 100 Ta=75℃ Ta=125℃ FORWARD CURRENT:...
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