UMN10N

UMN10N Diodes Switching diode UMN10N zApplications Very fast recovery zExternal dimensions (Unit : mm) 2.0±0.1 Each le ad same dimen sio n 0.25 ＋0.1 リードとも 　－0.05 (6) (5) (4) 0.15 －0.06 ＋0.1 zLand size figure 0.65 0.65 0.1～0.4 zFeatures 1) Small mold type. (UMD6) 2) High reliability 1.25±0.1 2.1±0.1 0～0.1 0.9 (1) (2) (3) 0.35 UMD6 0.65 0.65 1.3±0.1 0.7±0.1 0.9±0.1 0.2±0.1 0.7±0.1 zConstruction Silicon epitaxial planer zStructure ROHM : UMD6 JEDEC : SOT-363 JEITA : SC-88 dot (year week factory) zTaping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.1 　　　　　 0 1.75±0.1 0.3±0.1 0～0.1 3.5±0.05 2.45±0.1 8.0±0.2 2.2±0.1 4.0±0.1 2.0±0.05 φ1.1±0.1 1.35±0.1 zAbsolute maximum ratings (Ta=25°C) Param eter Revers e voltage (repetitive peak) Revers e voltage (DC) Forward current repetitive peak (Single) Average rectified forward current (Single) Surge current （ t=1us ） Power dis s ipation Junction tem perature Storage tem perature Sym bol VRM VR IFM Io Isurg e Pd Tj Ts tg Lim its 80 80 300 100 4 200 150 -55 to +150 Unit V V mA mA A mW ℃ ℃ zElectrical characteristic (Ta=25°C) Param eter Forward voltage Revers e current Capacitance between term inal Revers e recovery tim e Sym bol VF IR Ct trr Min. Typ. Max. 1.2 0.1 3.5 4 Unit V µA pF ns IF =100m A VR =70V VR =6V , f=1MHz VR =6V , IF=5m A , RL=50 Ω Conditions 2.4±0.1 1.6 1/3 Free Datasheet http://www.datasheet4u.com/ UMN10N Diodes zElectrical characteristic curves Ta=150℃ 100 Ta=75℃ Ta=125℃ FORWARD CURRENT:...