2SD2095

isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- ：VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 5 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2.5 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD2095 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3.5A; IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 3.5A; IB= 0.8A ICBO Collector Cutoff Current VCB= 500V; IE= 0 hFE DC Current Gain IC= 1A ; VCE= 5V VECF C-E Diode Forward Voltage IF= 5A fT Current-Gain—Bandwidth Product IC= 0.1A ; VCE= 10V COB Output Capacitance IE= 0 ; VCB= 10V; ftest=1.0MHz tf Fall Time ICP= 3.5A, IB1(end)= 0.8A 2SD2095 MIN TYP. MAX UNIT 5 V 5.0 V 1.5 V 10 μA 8 2.0 V 3 MHz 105 pF 0.5 1.0 μs Notice： ISC reserves th...