SIA430DJ

New Product SiA430DJ Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.0135 at VGS = 10 V 0.0185 at VGS = 4.5 V ID (A)b, c 12a 10.8 Qg (Typ.) 5.3 nC Halogen-free TrenchFET® Power MOSFET New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area RoHS COMPLIANT APPLICATIONS Load Switch PowerPAK SC-70-6L-Single D 1 D 2 D 3 6 D 5 D S 4 S 2.05 mm G AKX Part # code XXX Lot Traceability and Date code S G Marking Code 2.05 mm Ordering Information: SiA430DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) d, e Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID IDM IS PD TJ, Tstg Limit 20 ± 20 12a 12a 12a, b, c 10.1b, c 40 12a 2.9b, c 19.2 12.3 3.5b, c 2.2b, c - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Symbol Typical Maximum Unit RthJA t≤5s 28 36 Maximum Junction-to-Ambientb, f °C/W RthJC 5.3 6.5 Maximum Junction-to-Case (Drain) Steady State Notes: a. Package limited b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The Power...