Document
LAB
MECHANICAL DATA Dimensions in mm (inches)
SEME
2N3019CSM
HIGH FREQUENCY, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
FEATURES
0.51 ± 0.10 (0.02 ± 0.004)
0.31 rad. (0.012)
• SILICON PLANAR EPITAXIAL NPN TRANSISTOR • HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) • CECC SCREENING OPTIONS AVAILABLE
A 1.40 (0.055) max.
2.54 ± 0.13 (0.10 ± 0.005)
3
2
1
1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005)
0.76 ± 0.15 (0.03 ± 0.006)
0.31 rad. (0.012)
• SPACE QUALITY LEVELS AVAILABLE • HIGH SPEED SATURATED SWITCHING
A = 1.02 ± 0.10 (0.04 ± 0.004)
PAD 1 – Base
Underside View PAD 2 – Emitter PAD 3 – Collector
APPLICATIONS:
For high reliablitity general purpose applications requiring small size and low weight devices.
SOT23 CERAMIC (CSM) LCC1 PACKAGE
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO VCEO VEBO IC PD PD Rja Tj Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current Total Device Dissipation Derate above 50°C Thermal Resistance Junction to Ambient Max Junction Temperature Storage Temperature 140V 80V 7V 1A 350mW 2.00mW / °C 350°C / W 200°C –55 to 200°C
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 1/94
LAB
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
VCEO* V(BR)CBO* V(BR)EBO* ICBO IEBO VCE(sat)* VBE(sat)* Collector – Emitter Voltage Collector – Base Breakdown Voltage Emitter – Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current Collector – Emitter Saturation Voltage Base – Emitter Saturation Voltage
SEME
2N3019CSM
Test Conditions
IC = 10mA IC = 10µA IE = 10µA VCB = 90V VCB = 90V Tamb = 150°C VEB = 5V IC = 150mA IC = 500mA IC = 150mA IC = 0.1mA IC = 10mA IC = 150mA IC = 500mA IC = 1A Tamb = –55°C IC = 150mA IB = 15mA IB = 50mA IB = 15mA VCE = 10V VCE = 10V VCE = 10V VCE = 10V VCE = 10V VCE = 0.5V IC = 0 VBE = 0 VBE = 0
Min.
80 140 7
Typ.
Max. Unit
V V V 10 10 10 0.20 0.50 1.1 nA µA nA V V
50 90 100 50 15 40 300 —
hFE*
DC Current Gain
t* Pulse test tp = 300µs , δ ≤ 2%
DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
fT CEBO CCBO hfe NF Transition Frequency Capacitance Input Capacitance Small Signal Current Gain Noise Figure
Test Conditions
IC = 50mA VEB = 0.5V VCB = 10V IC = 1mA IC = 100µA VCE = 10V IC = 0 IE = 0 VCE = 5V VCE = 10V Rg = 1KΩ f = 20MHz f = 1.0MHz f = 1.0MHz f = 1kHz f = 1kHz
Min.
100
Typ.
Max. Unit
MHz 60 12 pF pF — db
80
400 4
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 1/94
.