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2N3019CSM Dataheets PDF



Part Number 2N3019CSM
Manufacturers Seme LAB
Logo Seme LAB
Description NPN TRANSISTOR
Datasheet 2N3019CSM Datasheet2N3019CSM Datasheet (PDF)

LAB MECHANICAL DATA Dimensions in mm (inches) SEME 2N3019CSM HIGH FREQUENCY, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS FEATURES 0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012) • SILICON PLANAR EPITAXIAL NPN TRANSISTOR • HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) • CECC SCREENING OPTIONS AVAILABLE A 1.40 (0.055) max. 2.54 ± 0.13 (0.10 ± 0.005) 3 2 1 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) 0.76 ± 0.

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LAB MECHANICAL DATA Dimensions in mm (inches) SEME 2N3019CSM HIGH FREQUENCY, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS FEATURES 0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012) • SILICON PLANAR EPITAXIAL NPN TRANSISTOR • HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) • CECC SCREENING OPTIONS AVAILABLE A 1.40 (0.055) max. 2.54 ± 0.13 (0.10 ± 0.005) 3 2 1 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) 0.76 ± 0.15 (0.03 ± 0.006) 0.31 rad. (0.012) • SPACE QUALITY LEVELS AVAILABLE • HIGH SPEED SATURATED SWITCHING A = 1.02 ± 0.10 (0.04 ± 0.004) PAD 1 – Base Underside View PAD 2 – Emitter PAD 3 – Collector APPLICATIONS: For high reliablitity general purpose applications requiring small size and low weight devices. SOT23 CERAMIC (CSM) LCC1 PACKAGE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD Rja Tj Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current Total Device Dissipation Derate above 50°C Thermal Resistance Junction to Ambient Max Junction Temperature Storage Temperature 140V 80V 7V 1A 350mW 2.00mW / °C 350°C / W 200°C –55 to 200°C Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 1/94 LAB ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter VCEO* V(BR)CBO* V(BR)EBO* ICBO IEBO VCE(sat)* VBE(sat)* Collector – Emitter Voltage Collector – Base Breakdown Voltage Emitter – Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current Collector – Emitter Saturation Voltage Base – Emitter Saturation Voltage SEME 2N3019CSM Test Conditions IC = 10mA IC = 10µA IE = 10µA VCB = 90V VCB = 90V Tamb = 150°C VEB = 5V IC = 150mA IC = 500mA IC = 150mA IC = 0.1mA IC = 10mA IC = 150mA IC = 500mA IC = 1A Tamb = –55°C IC = 150mA IB = 15mA IB = 50mA IB = 15mA VCE = 10V VCE = 10V VCE = 10V VCE = 10V VCE = 10V VCE = 0.5V IC = 0 VBE = 0 VBE = 0 Min. 80 140 7 Typ. Max. Unit V V V 10 10 10 0.20 0.50 1.1 nA µA nA V V 50 90 100 50 15 40 300 — hFE* DC Current Gain t* Pulse test tp = 300µs , δ ≤ 2% DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter fT CEBO CCBO hfe NF Transition Frequency Capacitance Input Capacitance Small Signal Current Gain Noise Figure Test Conditions IC = 50mA VEB = 0.5V VCB = 10V IC = 1mA IC = 100µA VCE = 10V IC = 0 IE = 0 VCE = 5V VCE = 10V Rg = 1KΩ f = 20MHz f = 1.0MHz f = 1.0MHz f = 1kHz f = 1kHz Min. 100 Typ. Max. Unit MHz 60 12 pF pF — db 80 400 4 Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 1/94 .


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