DatasheetsPDF.com

2SC6000 Dataheets PDF



Part Number 2SC6000
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon NPN Transistor
Datasheet 2SC6000 Datasheet2SC6000 Datasheet (PDF)

2SC6000 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6000 High Speed Switching Applications DC-DC Converter Applications • • • High DC current gain: hFE = 250 to 400 (IC = 2.5 A) Low collector-emitter saturation: VCE (sat) = 0.18 V (max) High speed switching: tf = 13 ns (typ) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation .

  2SC6000   2SC6000


Document
2SC6000 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6000 High Speed Switching Applications DC-DC Converter Applications • • • High DC current gain: hFE = 250 to 400 (IC = 2.5 A) Low collector-emitter saturation: VCE (sat) = 0.18 V (max) High speed switching: tf = 13 ns (typ) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Tc = 25°C DC Pulse Symbol VCBO VCEX VCEO VEBO IC ICP IB PC Tj Tstg Rating 120 120 50 6 7.0 10.0 0.5 20 150 −55 to 150 Unit V V V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-7J1A Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-13 Free Datasheet http://www.datasheet4u.com/ 2SC6000 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector emitter saturation voltage Base-emitter saturation voltage Rise time Switching time Storage time Fall time Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) tr tstg tf Test Condition VCB = 120 V, IE = 0 VEB = 6 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 1 mA VCE = 2 V, IC = 2.5 A IC = 2.5 A, IB = 83 mA IC = 2.5 A, IB = 83 mA See Figure 1 circuit diagram VCC ∼ − 20 V, RL = 8.0 Ω IB1 = 83 mA, IB2 = −166 mA Min ― ― 50 160 250 ― ― ― ― ― Typ. ― ― ― ― ― ― ― 45 450 13 Max 100 100 ― ― 400 0.18 1.10 ― ― ― ns V V Unit nA nA V Figure 1 Switching Time Test Circuit & Timing Chart VCC 20μs RL IB1 IB2 Duty cycle < 1% IB1 Input Output IB2 Marking C6000 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-13 Free Datasheet http://www.datasheet4u.com/ 2SC6000 IC – VCE 8 50 30 20 Common emitter Tc = 25℃ 10000 Common emitter VCE = 2 V hFE – IC (A) DC current gain hFE 6 Collector current IC 1000 Tc = 100°C 25 −55 100 4 10 2 5 IB = 2 mA 0 0 0 1 2 3 4 5 10 0.001 0.01 0.1 1 10 Collector-emitter voltage VCE (V) Collector current IC (A) VCE (sat) – IC 1 VBE (sat) – IC 10 Common emitter IC/IB = 30 Collector-emitter saturation voltage VCE (sat) (V) Common emitter IC/IB = 30 0.1 Tc = 100°C −55 0.01 25 Base-emitter saturation voltage VBE (sat) (V) 1 Tc = −55°C 100 25 0.001 0.001 0.01 0.1 1 10 0.1 0.001 0.01 0.1 1 10 Collector current IC (A) Collector current IC (A) IC – VBE 2.0 Common emitter VCE = 2 V (A) Collector current IC 1.5 1.0 Tc = 100°C 0.5 25 −55 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Base-emitter voltage VBE (V) 3 2006-11-13 Free Datasheet http://www.datasheet4u.com/ 2SC6000 rth(j-c) – tw 10 Transient thermal resistance rth(j-c) (°C/W) 1 0.1 0.001 Curves should be applied in thermal limited area. (Single non-repetitive pulse) Tc = 25℃ (infinite heat sink) 0.01 0.1 1 10 100 Pulse width tw (s) Safe Operating Area 100 (A) 10 IC max (Pulse)* IC max (Continuous)* 10 μs* 100 μs* 1 ms* 10 ms* Collector current IC 1 DC operation Tc = 25°C 100 ms* 0.1 *:Single non-repetitive pulse Tc = 25°C Curves linearly must with be derated in VCEO max 100 1000 increase temperature. 0.01 0.1 1 10 Collector-emitter voltage VCE (V) 4 2006-11-13 Free Datasheet http://www.datasheet4u.com/ 2SC6000 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended .


2N1922 2SC6000 2SC6010


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)