2SC6061

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6061 2SC6061 High-Speed Switching Applications DC-DC Converter Applications ・High-DC current gain: hFE = 120 to 300 (IC = 0.1 A)・ Low-collector-emitter saturation: VCE (sat) = 0.14 V (max) ・High-speed switching: tf = 0.2 μs (typ.) Absolute Maximum Ratings (Ta = 25°C) 2.9±0.2 1.9±0.2 0.95 0.95 +0.2 2.8-0.3 +0.2 1.6-0.1 Unit: mm 0.4±0.1 1 2 3 0.16±0.05 0.15 0.7±0.05 Characteristic Symbol Rating Unit Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current (Note 1) DC Pulse Base current Collector power dissipation (Note 2) t = 10s DC Junction temperature Storage temperature range VCBO VCEX VCEO VEBO IC ICP IB PC Tj Tstg 180 V 150 V 120 V 7 V 1.0 A 2.0 A 0.1 A 1000 mW 625 mW 150 °C −55 to 150 °C 1. Base 2. Emitter 3. Collector JEDEC ― JEITA ― TOSHIBA 2-3S1C Weight: 0.01g (typ.) 0～0.1 Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: Mounted on FR4 board (glass epoxy, 1.6mm thick, Cu area: 645 mm2) Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewin...