Ordering number : EN8561
2SC6065
2SC6065
Features
• • • •
NPN Triple Diffused Planar Silicon Transistor
Switching Re...
Ordering number : EN8561
2SC6065
2SC6065
Features
NPN Triple Diffused Planar Silicon
Transistor
Switching
Regulator Applications
High breakdown voltage. High-speed switching. Wide ASO. Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg PW≤300µs, duty cycle≤10% Conditions Ratings 500 400 8 1.5 3 0.7 0.9 150 --55 to +150 Unit V V V A A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE1 hFE2 hFE3 Conditions VCB=400V, IE=0A VEB=5V, IC=0A VCE=5V, IC=0.1A VCE=5V, IC=0.7A VCE=5V, IC=1mA Ratings min typ max 10 10 20 10 10 50 Unit µA µA
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