2SC6133

2SC6133 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6133 High-Speed Switching Applications DC-DC Converter Applications Unit: mm 2.1±0.1 1.7±0.1 +0.1 0.3 -0.05 3 0.166±0.05 Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) High-speed switching: tf = 45 ns (typ.) 2.0±0.1 High DC current gain: hFE = 400 to 1000 (IC = 0.15A) 0.65±0.05 0.7±0.05 1 2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation DC Pulse Symbol VCBO VCEX VCEO VEBO IC ICP IB PＣ (Note1) PＣ (Note2) Junction temperature Storage temperature range Tj Tstg Rating 40 30 20 7 1.5 2.5 150 800 500 150 −55 to 150 Unit V V V V A mA mW °C °C 1 :Gate 2 :Source 3 :Drain UFM JEDEC JEITA TOSHIBA ― ― 2-2U1A Weight: 6.6 mg (typ.) Note1: Note2: Note3: Mounted on ceramic board. (25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm2 ) Mounted on FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2 ) Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Pr...