2SC6134

2CS6134 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6134 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 250 to 400 (IC = 0.3A) Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) High-speed switching: tf = 25 ns (typ.) 0.65±0.05 1 2 3 0.166±0.05 Unit: mm 2.1±0.1 1.7±0.1 +0.1 0.3 -0.05 Characteristics Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation DC Pulse Symbol VCBO VCEX VCEO VEBO IC ICP IB PC (Note1) PC (Note2) Rating 50 50 30 6 3.0 5.0 0.3 800 500 150 −55 to 150 Unit V V V V A A mW °C °C UFM JEDEC JEITA TOSHIBA ― ― 2-2U1A Weight: 6.6 mg (typ.) Junction temperature Storage temperature range Tj Tstg Note1: Note2: Mounted on ceramic board. (25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm2 ) Mounted on FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2 ) Note3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliab...