DatasheetsPDF.com

2SC6135

Silicon NPN Transistor

Description

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6135 2SC6135 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm 2.1±0.1 1.7±0.1 0.3-+00..015 2.0±0.1 0.65±0.05 High DC current gain: hFE = 400 to 1000 (IC = 0.1A) Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max) High-speed switching: tf = 8...

Toshiba

Download 2SC6135 Datasheet

Similar Datasheet

2SC6100 Silicon NPN Transistor - Toshiba Semiconductor
2SC6101 NPN Epitaxial Planar Silicon Transistors - Sanyo Semicon Device
2SC6102 NPN Epitaxial Planar Silicon Transistors - Sanyo Semicon Device
2SC6102 PNP / NPN Epitaxial Planar Silicon Transistors - ON Semiconductor
2SC6105 Silicon NPN Transistor - Toshiba
2SC6106 NPN Triple Diffused Planar Silicon Transistor - Sanyo Semicon Device
2SC6112 NPN Triple Diffused Planar Silicon Transistor - Sanyo Semicon Device
2SC6113 NPN Triple Diffused Planar Silicon Transistor - Sanyo Semicon Device
2SC6114 Small signal low frequency amplifier - Rohm
2SC6116LS NPN Triple Diffused Planar Silicon Transistor - Sanyo Semicon Device

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)