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2SC6140 Dataheets PDF



Part Number 2SC6140
Manufacturers Toshiba
Logo Toshiba
Description Silicon NPN Transistor
Datasheet 2SC6140 Datasheet2SC6140 Datasheet (PDF)

2SC6140 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6140 ○ Audio Frequency Amplifier Applications • • • • High collector voltage Small collector output capacitance High transition frequency Complementary to 2SA2220 : VCEO = 160 V : Cob = 12pF (typ.) : fT = 100MHz (typ.) : mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temper.

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2SC6140 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6140 ○ Audio Frequency Amplifier Applications • • • • High collector voltage Small collector output capacitance High transition frequency Complementary to 2SA2220 : VCEO = 160 V : Cob = 12pF (typ.) : fT = 100MHz (typ.) : mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 160 160 6 1.5 2.5 0.5 1.8 150 −55 to 150 Unit V V V A A A W °C °C JEDEC JEITA TOSHIBA Weight: 1.5 g ⎯ ⎯ 2-10T1A (typ.) Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device. Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-10-15 Free Datasheet http://www.datasheet4u.com/ 2SC6140 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Transition frequency Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) Cob fT Test Condition VCB = 160V, IE = 0 VEB = 6V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 1mA VCE = 5V, IC = 0.1A IC = 0.5A, IB = 50mA IC = 0.5A, IB = 50mA VCB = 10V, IC = 0, f = 1MHz VCE = 10V, IC = 100mA Min ⎯ ⎯ 160 80 140 ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 12 100 Max 100 100 ⎯ ⎯ 280 0.5 1.3 ⎯ ⎯ V V pF MHz Unit nA nA V Marking C6140 Part No. (or abbreviation code) Lot No. Note 3 Note 3 : A line under a Lot No. identifies the indication of product Labels. [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-10-15 Free Datasheet http://www.datasheet4u.com/ 2SC6140 IC – VCE 1.5 70 50 1.5 25 IC – VCE 20 10 (A) (A) IC 1.2 30 0.9 1.2 IC Collector current 0.6 10 5 Collector current 20 0.9 5 0.6 3 2 0.3 2 Common emitter Ta = 25°C Single Pulse test 1.6 2 2.4 0.3 IB=1mA 0 0 4 8 12 16 Common emitter Ta= 25℃ Single Pulse test 20 24 0 0 0.4 0.8 IB=1mA 1.2 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) hFE-IC 1000 10 Common emitter IC/IB = 10 Single Pulse test VCE (sat) – IC Ta=100℃ 300 25℃ 100 −55℃ Collector-emitter saturation voltage VCE (sat) (V) DC current gain hFE 1 0.1 Ta=100℃ 25℃ −55℃ 30 Common emitter VCE = 5 V Single Pulse test 0.01 0.1 1 10 10 0.01 0.001 0.01 0.1 1 10 0.001 Collector current IC (A) Collector current IC (A) VBE (sat) – IC 10 Base -emitter saturation voltage IC (A) Common emitter IC/IB = 10 Single Pulse test 1.5 IC – VBE Common emitter VCE = 5 V Single Pulse test VBE (sat) (V) 1 Ta=100℃ 25℃ 1 −55℃ Collector current Ta=100℃ 25℃ 0.5 −55℃ 0.1 0.001 0.01 0.1 1 10 0 0 0.4 0.8 1.2 1.6 Collector current IC (A) Base-emitter voltage VBE (V) 3 2009-10-15 Free Datasheet http://www.datasheet4u.com/ 2SC6140 rth(j-a) – tw 100 Transient thermal resistance rth(j-a) (°C/W) 10 1 0.001 0.01 0.1 1 Curves apply only to limited areas of thermal resistance. Single nonrepetitive pulse Ta = 25°C 10 100 1000 Pulse width tw (s) Safe Operating Area 10 IC max. (pulsed)* IC max. (continuous) 100μs* 1 ms* 100 ms* 10 ms* 2 PC – Ta PC (W) Collector power dissipation (A) 1.6 1 IC 1.2 Collector current 0.1 DC operation Ta=25℃ 0.8 0.4 0.01 0 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 10 100 0 VCEO max 1000 50 100 150 200 0.001 1 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) 4 2009-10-15 Free Datasheet http://www.datasheet4u.com/ 2SC6140 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, r.


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