TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC6142
2SC6142
○ High Voltage Switching Applications ○ Switching ...
TOSHIBA
Transistor Silicon
NPN Triple Diffused Type
2SC6142
2SC6142
○ High Voltage Switching Applications ○ Switching
Regulator Applications ○ DC-DC Converter Applications
６．５±０．２ ５．２±０．２
Unit: mm
０．６ MAX．
１．５±０．２
１．６ ５．５±０．２
Excellent switching times: tf = 0.15 μs (typ.) High collector breakdown voltage: VCES = 800 V, VCEO = 375 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO VCES VCEO VEBO
IC ICP IB PC Tj Tstg
Rating
Unit
800
V
800
V
375
V
8
V
1.5 A
3
0.75
A
1.1
W
150
°C
−55 to 150
°C
０．９ ２．３ ２．３
４．１±０．２ ５．７
１．１±０．２ ０．６ MAX
２．３±０．２
１２３
０．８ MAX． １．1 MAX．
０．６±０．１５ ０．６±０．１５
1. BASE 2. COLLECTOR 3. EMITTER
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-7J2A
Weight: 0.32 g (typ.)
Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating...
