isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC643
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
...
isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2SC643
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 800V (Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high speed switching and horizontal deflection
output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
1100
V
VCEO
Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
2.5
A
ICM
Collector Current-Peak
7.5
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
0.5
A
50
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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isc Silicon
NPN Power
Transistor
Inchange Semiconductor
2SC643
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.6A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 0.6A
hFE
DC Current Gain
IC= 2A; VCE=15V
ICBO
Collector Cutoff Current
VCB= 500V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
MIN TYP. MAX UNIT
600
V
5.0
V
1.5
V
7
10
uA
0.1 mA
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any t...
