isc Silicon NPN Power Transistor
2SD1706
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·Good ...
isc Silicon
NPN Power
Transistor
2SD1706
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage-
: VCE(sat)= 0.5V(Max.)@ IC= 7A ·Complement to Type 2SB1155 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
130
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
15
A
ICP
Collector Current-Pulse
Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃
TJ
Junction Temperature
25
A
80 W
3
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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isc Silicon
NPN Power
Transistor
2SD1706
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 7A; IB= 0.35A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 15A; IB= 1.5A
VBE(sat)-1 Base -Emitter Saturation Voltage
IC= 7A; IB= 0.35A
VBE(sat)-2 Base -Emitter Saturation Voltage
IC= 15A; IB= 1.5A
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.1A; VCE= 2V
hFE-2
DC Current Gain
IC= 3A; VCE= 2...