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DAM3B13 Dataheets PDF



Part Number DAM3B13
Manufacturers Hitachi
Logo Hitachi
Description SURGE SUPPRESSOR DIODE
Datasheet DAM3B13 DatasheetDAM3B13 Datasheet (PDF)

SURGE SUPPRESSOR DIODE DAM3B FEATURES • High transient reverse power capability suitable for protecting automobile electronic components etc. • Diffused-junction. Resin encapsulated. OUTLINE DRAWING φ 3.6 (0.14) Unit in mm(inch) φ 0.8 (0.03) 58MIN. (2.28) 6 (0.24) 27CA Weight: 0.50 (g) ABSOLUTE MAXIMUM RATINGS Items Non-Repetitive Peak Reverse OneCycle Dissipation Operating Junction Temperature Storage Temperature DC Reverse Voltage Symbols PRSM Tj Tstg VDC Units W °C °C V Ratings 180.

  DAM3B13   DAM3B13


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SURGE SUPPRESSOR DIODE DAM3B FEATURES • High transient reverse power capability suitable for protecting automobile electronic components etc. • Diffused-junction. Resin encapsulated. OUTLINE DRAWING φ 3.6 (0.14) Unit in mm(inch) φ 0.8 (0.03) 58MIN. (2.28) 6 (0.24) 27CA Weight: 0.50 (g) ABSOLUTE MAXIMUM RATINGS Items Non-Repetitive Peak Reverse OneCycle Dissipation Operating Junction Temperature Storage Temperature DC Reverse Voltage Symbols PRSM Tj Tstg VDC Units W °C °C V Ratings 1800(Rectangular pulse t=0.1ms Tj=25°C start) -40 ~ +150 -40 ~ +150 Refer to characteristics column CHARACTERISTICS(TL=25°C) Type DC Reverse Voltage VDC (V) 7 8 9 10 11 12 13 14 16 18 20 22 24 26 28 31 34 37 Characteristics Zener Voltage Vz (V) Maximum Test Current Dynamic Iz Minimum Maximum Impedance (mA) Zz (ohm) 9.4 10.4 11.4 12.4 13.5 15.3 16.8 18.8 20.8 22.7 25.1 28.0 31.0 33.4 36.1 39.8 43.3 46.9 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 28.9 32.0 35.0 38.6 41.9 46.2 50.7 55.1 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 30 30 30 75 75 75 75 75 75 45 45 45 30 30 30 30 30 30 20 20 20 Maximum Reverse Current IRRM (µA) 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 DAM3B10 DAM3B11 DAM3B12 DAM3B13 DAM3B15 DAM3B16 DAM3B18 DAM3B20 DAM3B22 DAM3B24 DAM3B27 DAM3B30 DAM3B33 DAM3B36 DAM3B39 DAM3B43 DAM3B47 DAM3B51 Type mark (Red) 26MIN. (1.02) Cathode band (Red) Direction of polarity 26MIN. (1.02) VR (V) 7 8 9 10 11 12 13 14 16 18 20 22 24 26 28 31 34 37 PDE-DAM3B-0 Free Datasheet http://www.datasheet4u.com/ DAM3B Typical zener characteristics DAM 3B10 DAM 3B11 DAM 3B12 DAM DAM 3B13 3B15 DAM 3B16 DAM DAM 3B18 DAM 3B20 3B22 DAM 3B24 DAM 3B2 7 DAM 3B DAM 30 3B3 3 DAM 3B DAM 36 3B3 9 DA M3 B43 DA M3 B47 DA M3 B51 Typical reverse power characteristic (Rectangular pulse non-repetitive) 10 1000 100 10 PEAK REVERSE POWER (kW) ZENER CURRENT (A) 1 TL=25˚C 1 0.1 0.01 TL=25°C 0.001 0 10 20 30 40 50 60 70 0.1 0.01 0.1 1 10 100 ZENER VOLTAGE (V) RECTANGULAR PULSE DURATION (ms) Transient thermal impedance 200 TRANSIENT THERMAL IMPEDANCE (˚C/W) 100 Rth(j-a) Rth(j-l) 10 L Lead length =6mm Lead temp Copper foil ( 5.5) PC board (100×180×1.6t) 1 0.1 0.001 0.01 0.1 TIME (s) 1 10 100 PDE-DAM3B-0 Free Datasheet http://www.datasheet4u.com/ HITACHI POWER SEMICONDUCTORS Notices 1.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are adviced to contact Hitachi sales department for the latest version of this data sheets. 2.Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure before use. 3.In cases where extremely high reliability is required(such as use in nuclear power control, aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel control equipment and various kinds of safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement. Or consult Hitachi’s sales department staff. 4.In no event shall Hitachi be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to this data sheets. Hitachi assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in this data sheets. 5.In no event shall Hitachi be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 6.No license is granted by this data sheets under any patents or other rights of any third party or Hitachi, Ltd. 7.This data sheets may not be reproduced or duplicated, in any form, in whole or in part , without the expressed written permission of Hitachi, Ltd. 8.The products (technologies) described in this data sheets are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety not are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. „ For inquiries relating to the products, please contact nearest overseas representatives which is located “Inquiry” portion on the top page of a home page. Hitachi power semiconductor home page address http://www.hitachi.co.jp/pse Free Datasheet http://www.datasheet4u.com/ .


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