2N3209DCSM

LAB MECHANICAL DATA Dimensions in mm (inches) SEME 2N3209DCSM DUAL HIGH SPEED, MEDIUM POWER PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FEATURES 2.29 ± 0.20 (0.09 ± 0.008) 1.65 ± 0.13 (0.065 ± 0.005) 0.64 ± 0.08 (0.025 ± 0.003) 1.40 ± 0.15 (0.055 ± 0.006) SILICON PLANAR EPITAXIAL DUAL PNP TRANSISTOR 4.32 ± 0.13 (0.170 ± 0.005) 2.54 ± 0.13 (0.10 ± 0.005) 2 1 3 4 5 HERMETIC CERAMIC SURFACE MOUNT PACKAGE CECC SCREENING OPTIONS AVAILABLE SPACE QUALITY LEVELS OPTIONS HIGH SPEED SATURATED SWITCHING A 6 0.23 rad. (0.009) 1.27 ± 0.13 (0.05 ± 0.005) 6.22 ± 0.13 (0.245 ± 0.005) A= LCC2 PACKAGE Underside View APPLICATIONS: For high reliablitity general purpose applications requiring small size and low weight devices. PAD 1 - Collector 1 PAD 2 - Base 1 PAD 3 - Base 2 PAD 4 - Collector 2 PAD 5 - Emitter 2 PAD 6 - Emitter 1 ABSOLUTE MAXIMUM RATINGS(Tcase = 25°C unless otherwise stated) PER SIDE VCBO VCEO VEBO IC PD PD Rja Tj Tstg Semelab plc. Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current Device Dissipation Derate above 50°C Thermal Resistance Junction to Ambient Max Junction Temperature Storage Temperature TOTAL –20V –20V –4V –200mA 300mW 500mW 2mW / °C 3.3mW / °C 420°C / W 250°C / W 200°C –65 to 200°C Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 2/00 LAB ELECTRICAL CHARACTERISTICS (Tcase = ...