2N3419 TRANSISTOR Datasheet

2N3419 Datasheet, PDF, Equivalent


Part Number

2N3419

Description

NPN MEDIUM POWER SILICON TRANSISTOR

Manufacture

Microsemi Corporation

Total Page 6 Pages
Datasheet
Download 2N3419 Datasheet


2N3419
2N3418 thru 2N3421
Available on
commercial
versions
NPN MEDIUM POWER SILICON
TRANSISTOR
Qualified per MIL-PRF-19500/393
DESCRIPTION
This family of high-frequency, epitaxial planar transistors feature low saturation voltage. These
devices are also available in TO-39 and low profile U4 packaging. Microsemi also offers
numerous other transistor products to meet higher and lower power ratings with various
switching speed requirements in both through-hole and surface-mount packages.
Qualified Levels:
JAN, JANTX and
JANTXV
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
JEDEC registered 2N3418 through 2N3421 series.
JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/393.
RoHS compliant versions available (commercial grade only).
VCE(sat) = 0.25 V @ IC = 1 A.
Rise time tr = 0.22 µs max @ IC = 1.0 A, IB1 = 100 mA.
Fall time tf = 0.20 µs max @ IC = 1.0 A, IB2 = -100 mA.
APPLICATIONS / BENEFITS
General purpose transistors for medium power applications requiring high frequency switching and
low package profile.
Military and other high-reliability applications.
TO-5 Package
Also available in:
TO-39 package
(short leaded)
2N3418S – 2N3421S
U4 package
(surface mount)
2N3418U4 – 2N3421U4
MAXIMUM RATINGS
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
tp <= 1 ms, duty cycle <= 50%
Total Power Dissipation
@ TA = +25 °C (1)
@ TC = +100 °C (2)
Operating & Storage Junction Temperature Range
Symbol
V CEO
V CBO
V EBO
IC
PD
TJ, Tstg
Notes: 1. Derate linearly 5.72 mW/°C for TA > +25 °C.
2. Derate linearly 150 mW/°C for TC > +100 °C.
2N3418
2N3420
2N3419
2N3421
60 80
85 125
8
3
5
1
5
-65 to +200
Unit
V
V
V
A
W
°C
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0192, Rev. 2 (111684)
©2011 Microsemi Corporation
Page 1 of 6

2N3419
MECHANICAL and PACKAGING
CASE: Hermetically sealed, kovar base, nickel cap
MARKING: Part number, date code, manufacturer’s ID
POLARITY: See Package Dimensions on last page.
2N3418 thru 2N3421
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = Commercial
JEDEC type number
(see Electrical Characteristics
table)
PART NOMENCLATURE
JAN 2N3418 (e3)
Symbol
C obo
I CEO
I CEX
I EBO
h FE
V CEO
V CBO
V EBO
SYMBOLS & DEFINITIONS
Definition
Common-base open-circuit output capacitance.
Collector cutoff current, base open.
Collector cutoff current, circuit between base and emitter.
Emitter cutoff current, collector open.
Common-emitter static forward current transfer ratio.
Collector-emitter voltage, base open.
Collector-emitter voltage, emitter open.
Emitter-base voltage, collector open.
RoHS Compliance
e3 = RoHS Compliant (available
on commercial grade only)
Blank = non-RoHS Compliant
T4-LDS-0192, Rev. 2 (111684)
©2011 Microsemi Corporation
Page 2 of 6


Features 2N3418 thru 2N3421 Available on commerc ial versions NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 393 DESCRIPTION This family of high-f requency, epitaxial planar transistors feature low saturation voltage. These d evices are also available in TO-39 and low profile U4 packaging. Microsemi als o offers numerous other transistor prod ucts to meet higher and lower power rat ings with various switching speed requi rements in both through-hole and surfac e-mount packages. Qualified Levels: JA N, JANTX and JANTXV Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • JEDEC registered 2N3418 through 2N3421 series. • JAN, JANTX, and JANTXV qual ifications are available per MIL-PRF-19 500/393. • RoHS compliant versions av ailable (commercial grade only). • VC E(sat) = 0.25 V @ IC = 1 A. • Rise ti me tr = 0.22 µs max @ IC = 1.0 A, IB1 = 100 mA. • Fall time tf = 0.20 µs m ax @ IC = 1.0 A, IB2 = -100 mA. APPLICATIONS / BENEFITS • Gen.
Keywords 2N3419, datasheet, pdf, Microsemi Corporation, NPN, MEDIUM, POWER, SILICON, TRANSISTOR, N3419, 3419, 419, 2N341, 2N34, 2N3, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)