2N3439 2N3440
MECHANICAL DATA Dimensions in mm (inches)
8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335)
HIGH VOLTAGE...
2N3439 2N3440
MECHANICAL DATA Dimensions in mm (inches)
8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335)
HIGH VOLTAGE
NPN TRANSISTORS
FEATURES
4.19 (0.165) 4.95 (0.195)
12.70 (0.500) min.
0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia.
DUAL SILICON PLANAR EPITAXIAL
NPN TRANSISTOR HIGH VOLTAGE
5.08 (0.200) typ.
APPLICATIONS:
2 1
0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2.54 (0.100)
3
These devices are particularly suited as drivers in high-voltage low current inverters, switing and series
regulators.
45˚
TO39 PACKAGE
Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC IB Ptot Tstg Tj Collector – Base Voltage (IE = 0) Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Collector Current Base Current Total Power Dissipation at Tcase £ 25°C Tamb £ 50°C Storage Temperature Junction Temperature 2N3439 450V 350V 2N3440 300V 250V
7V 1A 0.5A 5W 1W –55 to 200°C 200°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail:
[email protected] Website: http://www.semelab.co.uk
Prelim.12/99
2N3439 2N3440
ELECTRICAL CHARACTERISTICS
Parameter
VCEO(sus)* ICEO ICEX ICBO IEBO VCE(sat)* VBE(sat)* Collector – Emitter Sustaining Voltage (IB = 0) Collector Cut-off Current (IB = 0) Collector Cut-off Current (VBE = -1.5V) Collector – Base Cut-off Current (IE = 0) Emitter Cut-off Current (IC = 0) Collector – Emitter Saturation Voltage Base – Emitter Satura...
