IRF7820PBF

IRF7820PbF HEXFET® Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very Low RDS(on) at 10V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating VDSS RDS(on) max Qg (typ.) 29nC 200V 78m @VGS = 10V S S S G 1 2 3 4 8 7 A A D D D D 6 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ T STG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Max. 200 ± 20 3.7 2.9 29 2.5 1.6 0.02 -55 to + 150 Units V f f c A W W/°C °C Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Resistance Parameter RJL RJA Junction-to-Drain Lead Junction-to-Ambient f g Typ. ––– ––– Max. 20 50 Units °C/W Notes  through … are on page 9 www.irf.com 1 07/24/2012 Free Datasheet http://www.datasheet4u.com/ IRF7820PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS  VDSS / TJ RDS(on) VGS(th)  VGS(th) IDSS IGSS gfs Qg Q gs1 Q gs2 Q gs Q gd Q godr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leak...