Document
PD-95214A
IRF7828PbF
HEXFET® Power MOSFET for DC-DC Converters
• • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Lead-Free
S S S G
1 2 3 4
8 7
A D D D D
6 5
Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. The IRF7828 has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRF7828 offers particulary low RDS(on) and high Cdv/dt immunity for synchronous FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 3W is possible in a typical PCB mount application.
SO-8
T o p V ie w
DEVICE CHARACTERISTICS
IRF7828PbF RDS(on) QG Qsw Qoss 9.5mΩ 9.2nC 3.7nC 6.1nC
Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS ≥ 4.5V) Pulsed Drain Current Power Dissipation TA = 25°C TL = 70°C Junction & Storage Temperature Range Continuous Source Current (Body Diode) Pulsed Source Current Thermal Resistance Parameter Maximum Junction-to-Ambient Maximum Junction-to-Lead R θJA R θJL Max. 50 20 Units °C/W °C/W TJ, TSTG IS ISM TA = 25°C TL = 70°C IDM PD Symbol VDS VGS ID IRF7828PbF 30 ±20 13.6 11 100 2.5 1.6 –55 to 150 3.1 100 °C A W A Units V
04/05/07
Free Datasheet http://www.datasheet4u.com/
IRF7828PbF
Electrical Characteristics
Parameter Drain-to-Source Breakdown Voltage Static Drain-Source on Resistance Gate Threshold Voltage Drain-Source Leakage Current BVDSS RDS (on) VGS(th) IDSS Min 30 – 1.0 – – IGSS QG QG QGS1 QGS2 QGD Qsw Qoss RG td (on) tr td (off) tf Ciss Coss – – – – – – – – – – – – – – – – Typ – 9.5 – – – – 9.2 7.3 2.5 0.8 2.9 3.7 6.1 2.3 6.3 2.7 9.7 7.3 1010 360 110 Max – 12.5 – 1.0 150 ±100 14 – – – – – – – – – – – – – – pF VDS = 15V, VGS = 0 ns Ω VDD = 15V, ID = 10A VGS = 4.5V Clamped Inductive Load VDS = 10V, VGS = 0 nC µA nA Units V mΩ V Conditions VGS = 0V, ID = 250µA VGS = 4.5V, ID = 10A VDS = VGS,ID = 250µA VDS = 24V, VGS = 0 VDS = 24V, VGS = 0, Tj = 125°C Gate-Source Leakage Current Total Gate Chg Cont FET Total Gate Chg Sync FET Pre-Vth Gate-Source Charge Post-Vth Gate-Source Charge Gate to Drain Charge Switch Chg(Qgs2 + Qgd) Output Charge Gate Resistance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance VGS = ±20V VGS=5.0V, ID=15A, VDS=16V VGS = 5V, VDS< 100mV VDS = 15V, ID = 10A
Current*
Reverse Transfer Capacitance Crss
Source-Drain Rating & Characteristics
Parameter Diode Forward Voltage* Reverse Recovery Charge Reverse Recovery Charge (with Parallel Schottky) VSD Qrr Qrr(s) Min – – – Typ – 13 13 Max 1.0 – – U.