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IRFB3006GPBF Dataheets PDF



Part Number IRFB3006GPBF
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRFB3006GPBF DatasheetIRFB3006GPBF Datasheet (PDF)

PD - 96238 IRFB3006GPbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free l Halogen-Free D VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) D 60V 2.1m: 2.5m: 270.

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PD - 96238 IRFB3006GPbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free l Halogen-Free D VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) D 60V 2.1m: 2.5m: 270A 195A c S G D S TO-220AB G D S Gate Drain Source Absolute Maximum Ratings Symbol ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Max. d f 270 190 195 1080 375 2.5 ± 20 10 -55 to + 175 300 10lb in (1.1N m) 320 See Fig. 14, 15, 22a, 22b, ™ ™ Units A W W/°C V V/ns °C x x Avalanche Characteristics EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Ãd e Thermal Resistance Symbol RθJC RθCS RθJA g mJ A mJ Junction-to-Case Case-to-Sink, Flat Greased Surface Junction-to-Ambient j Parameter Typ. ––– 0.50 ––– Max. 0.4 ––– 62 Units °C/W www.irf.com 1 06/29/09 Free Datasheet http://www.datasheet4u.com/ IRFB3006GPbF Static @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS RG Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Internal Gate Resistance Min. Typ. Max. Units 60 ––– ––– 2.0 ––– ––– ––– ––– ––– ––– 0.07 2.1 ––– ––– ––– ––– ––– 2.0 ––– ––– 2.5 4.0 20 250 100 -100 ––– Conditions V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 5mA mΩ VGS = 10V, ID = 170A V VDS = VGS, ID = 250µA µA VDS = 60V, VGS = 0V VDS = 60V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V Ω g d Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Crss Coss eff. (ER) Coss eff. (TR) Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Total Gate Charge Sync. (Qg - Qgd) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units ––– 200 37 60 140 16 182 118 189 8970 1020 534 1480 1920 ––– 300 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– S nC Conditions VDS = 25V, ID = 170A ID = 170A VDS =30V VGS = 10V ID = 170A, VDS =0V, VGS = 10V VDD = 39V ID = 170A RG = 2.7Ω VGS = 10V VGS = 0V VDS = 50V ƒ = 1.0 MHz, See Fig. 5 VGS = 0V, VDS = 0V to 48V , See Fig. 11 VGS = 0V, VDS = 0V to 48V 280 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Effective Output Capacitance (Energy Related) ––– ––– Effective Output Capacitance (Time Related) g ns pF g h i h Diode Characteristics Symbol IS ISM VSD trr Qrr IRRM ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time Min. Typ. Max. Units ––– ––– ––– 270 ––– ™ Conditions MOSFET symbol showing the integral reverse G S D A A Ãd 1080 ––– ––– 1.3 V ––– 44 ––– ns ––– 48 ––– ––– 63 ––– nC TJ = 125°C ––– 77 ––– ––– 2.4 ––– A TJ = 25°C Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) p-n junction diode. TJ = 25°C, IS = 170A, VGS = 0V VR = 51V, TJ = 25°C IF = 170A TJ = 125°C di/dt = 100A/µs TJ = 25°C g g Notes:  Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) ‚ Repetitive rating; pulse width limited by max. junction temperature. ƒ Limited by TJmax, starting TJ = 25°C, L = 0.022mH RG = 25 Ω, IAS = 170A, VGS =10V. Part not recommended for use above this value . „ ISD ≤ 170A, di/dt ≤ 1360A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. … Pulse width ≤ 400µs; duty cycle ≤ 2%. † Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . ‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as ˆ Rθ is measured at TJ approximately 90°C. Coss while VDS is rising from 0 to 80% VDSS. 2 www.irf.com Free Datasheet http://www.datasheet4u.com/ IRFB3006GPbF 1000 TOP 1000 ID, Drain-to-Source Current (A) 100 BOTTOM ID, Drain-to-Source Curr.


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