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IRFH6200PBF

International Rectifier

Power MOSFET

VDS RDS(on) max (@VGS = 4.5V) (@VGS = 2.5V) Qg (typical) RG (typical) ID (@Tmb = 25°C) 20 0.99 1.50 155 1.3 h100 V mΩ ...


International Rectifier

IRFH6200PBF

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Description
VDS RDS(on) max (@VGS = 4.5V) (@VGS = 2.5V) Qg (typical) RG (typical) ID (@Tmb = 25°C) 20 0.99 1.50 155 1.3 h100 V mΩ nC Ω A Applications Charge and discharge switch for battery application Load switch for 12V (typical) bus Hot-Swap Switch Features Low RDSon (≤ 0.99mΩ) Low Thermal Resistance to PCB (≤ 0.8°C/W) Low Profile (≤ 0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free IRFH6200TRPbF HEXFET® Power MOSFET PQFN 5X6 mm results in ⇒ Benefits Lower Conduction Losses Enable better thermal dissipation Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Base Part Number IRFH6200PbF Package Type PQFN 5mm x 6mm PQFN 5mm x 6mm Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400 Orderable part number IRFH6200TRPbF IRFH6200TR2PbF Note EOL Notice #259 Absolute Maximum Ratings VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ Tmb = 25°C ID @ Tmb = 100°C IDM PD @TA = 25°C PD @Tmb = 25°C TJ TSTG Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V cContinuous Drain Current, VGS @ 4.5V Pulsed Drain Current gPower Dissipation gPower Dissipation gLinear Derating Factor Operating Junction and Storage Temperature Range Max. 20 ±12 49 40 100h 100h 400 3.6 156 0.029 -55 to + 150 Units V A W W/°C °C Notes  through † are on page 9 1 www.irf.c...




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