STH130N10F3

STF130N10F3, STFI130N10F3, STH130N10F3-2, STP130N10F3 N-channel 100 V, 7.8 mΩ typ., 120 A STripFET™III Power MOSFET in TO-220FP, I²PAKFP, H²PAK-2 and TO-220 packages Datasheet — production data Features Order codes STF130N10F3 STFI130N10F3 STH130N10F3-2 STP130N10F3 ■ ■ VDSS RDS(on) max. 9.6 mΩ ID 3 46 A TO-220FP 1 2 1 2 3 100 V 9.3 mΩ 9.6 mΩ I²PAKFP 120 A TAB TAB Ultra low on-resistance 100% avalanche tested 2 1 3 1 2 3 H²PAK-2 TO-220 Applications ■ High current switching applications Figure 1. Internal schematic diagram $4!" Description These devices are N-channel enhancement mode Power MOSFETs produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize onresistance and gate charge to provide superior switching performance. $ 4!" ' ' 3 4/  4/ &0AND) 0!+&0 3  (£0!+  !-V Table 1. Device summary Order codes Marking Package TO-220FP I²PAKFP 130N10F3 H²PAK-2 TO-220 Packaging Tube Tube Tape and reel Tube STF130N10F3 STFI130N10F3 STH130N10F3-2 STP130N10F3 November 2012 This is information on a product in full production. Doc ID 018492 Rev 3 1/23 www.st.com 23 Free Datasheet http://www.datasheet4u.com/ Contents STF130N10F3, STFI130N10F3, STH130N10F3-2, STP130N10F3 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....