isc Silicon NPN Power Transistor
BD933/935/937/939/941
DESCRIPTION ·DC Current Gain-
: hFE= 40(Min)@ IC= 150mA ·Comple...
isc Silicon
NPN Power
Transistor
BD933/935/937/939/941
DESCRIPTION ·DC Current Gain-
: hFE= 40(Min)@ IC= 150mA ·Complement to Type BD934/936/938/940/942 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in output stages of audio and television
amplifier circuits where high peak powers can occur.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
BD933
45
BD935
60
VCBO
Collector-Base Voltage BD937
100
BD939
120
BD941
140
BD933
45
VCEO
Collector-Emitter Voltage
BD935
60
BD937
80
BD939
100
BD941
120
VEBO
Emitter-Base Voltage
5
IC
Collector Current-Continuous
3
ICM
Collector Current-Peak
7
IB
Base Current-Continuous
0.5
PC
Collector Power Dissipation @ TC=25℃
30
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
UNIT
V
V
V A A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
Rth j-a Thermal Resistance,Junction to Ambient
MAX 4.17 70
UNIT ℃/W ℃/W
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
BD933/935/937/939/941
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD933
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BD935 BD937 BD939
IC= 30mA ; IB= 0
BD941
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A
VBE(on) ICBO ICEO
Base-Emitter On Voltage Collector Cutoff Current Coll...