Data Sheet No. 2N3499
Type 2N3499
Geometry 5620 Polarity NPN Qual Level: JAN - JANTXV
Features: • General-purpose silic...
Data Sheet No. 2N3499
Type 2N3499
Geometry 5620 Polarity
NPN Qual Level: JAN - JANTXV
Features: General-purpose silicon
transistor for switching and amplifier applications. Housed in TO-39 case. Also available in chip form using the 5620 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/366 which Semicoa meets in all cases.
Generic Part Number: 2N3499
REF: MIL-PRF-19500/366
TO-39
Maximum Ratings
TC = 25 C unless otherwise specified
o
Rating
Collector-Emitter voltage Collector-Base Voltage Emitter-Base voltage Collector Current, Continuous Power Dissipation, TA = 25oC Derate above 25oC Operating Junction Temperature Storage Temperature
Symbol
VCEO VCBO VEBO IC PD
Rating
100 100 6.0 500 5.0 28.8
Unit
V V V mA mW mW/oC
o
TJ TSTG
-65 to +200 -65 to +200
C C
o
Data Sheet No. 2N3499
Electrical Characteristics
TC = 25oC unless otherwise specified
OFF Characteristics
Collector-Base Breakdown Voltage IC = 10 µA Collector-Emitter Breakdown Voltage IC = 10 mA Emitter-Base Breakdown Voltage IE = 10 µA Collector-Base Cutoff Current VCB = 50 V Emitter-Base Cutoff Current VEB = 4 V
Symbol
V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO
Min
100 100 6.0 -----
Max
------50 25
Unit
V V V nA nA
ON Characteristics
Forward Current Transfer Ratio IC = 100 µA, VCE = 10 V (pulsed) IC = 1.0 mA, VCE = 10 V (pulsed) IC = 10 mA, VCE = 10 V (pulsed) IC = 150 mA, VCE = 10 V (pulsed) IC = 300 mA, VCE = 10 V (pulsed) Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA I...