RLT780-1000G

ROITHNER LASERTECHNIK SCHOENBRUNNER STRASSE 7, VIENNA, AUSTRIA TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44 [email protected] www.roithner-laser.com RLT780-1000G TECHNICAL DATA High Power Infrared Laser Diode Lasing mode structure: multi mode Lasing wavelength: typ. 785 nm Optical power: 1 W Package: 9 mm (SOT-148) PIN CONNECTION: 1) Laser diode cathode 2) Laser diode anode and photodiode cathode 3) Photodiode anode LASERDIODE MUST BE COOLED! NOTE! Absolute Maximum Ratings (Tc = 25°C) CHARACTERISTIC SYMBOL Optical Output Power Po LD Reverse Voltage VR(LD) PD Reverse Voltage VR(PD) Operating Temperature TC Storage Temperature TSTG RATING 1.2 1.5 10 -20 .. +30 -40 .. +70 UNIT W V V °C °C Optical-Electrical Characteristics (Tc = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Emitting Aperture A cw Optical Output Power Po multi mode Threshold Current Ith cw Operation Current Iop Po = 1 W Forward Voltage Uf Po = 1 W Lasing Wavelength P λp o = 1 W Spectral Width FWHM Po = 1 W ∆λ Beam Divergence Po = 1 W θ// Beam Divergence Po = 1 W θ⊥ Monitor Current Im Po = 1 W MIN TYP 1 x 100 MAX 390 1.2 1.8 780 0.3 100 1 420 1.3 1.9 785 1.0 25 30 500 450 1.4 2.0 790 1.5 1500 UNIT µm² W mA A V nm nm ° ° µA Free Datasheet http://www.datasheet4u.com/ ...