RLT808-150GS

ROITHNER LASERTECHNIK SCHOENBRUNNER STRASSE 7, VIENNA, AUSTRIA TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44 [email protected] www.roithner-laser.com RLT808-150GS TECHNICAL DATA High Power Infrared Laser Diode Lasing mode structure: single mode Lasing wavelength: typ. 808 nm Optical power: 150 mW Package: 9 mm (SOT-148) PIN CONNECTION: 1) Laser diode anode 2) Laser diode cathode and photodiode cathode 3) Photodiode anode LASERDIODE MUST BE COOLED! NOTE! Absolute Maximum Ratings (Tc = 25°C) CHARACTERISTIC SYMBOL Optical Output Power Po LD Reverse Voltage VR(LD) PD Reverse Voltage VR(PD) Operating Temperature TC Storage Temperature TSTG RATING 170 1.5 10 -20 .. +40 -40 .. +70 UNIT mW V V °C °C Optical-Electrical Characteristics (Tc = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Emitting Aperture A cw Optical Output Power Po single mode Threshold Current Ith cw Operation Current Iop Po = 150 mW Forward Voltage Uf Po = 150 mW Lasing Wavelength P λp o = 150 mW Spectral Width FWHM Po = 150 mW ∆λ Beam Divergence Po = 150 mW θ// Beam Divergence Po = 150 mW θ⊥ Monitor Current Im Po = 150 mW MIN 40 170 1.8 803 100 TYP 1x5 150 50 180 1.9 808 0.2 25 40 500 MAX 60 190 2.0 810 0.3 1500 UNIT µm² mW mA mA V nm nm ° ° µA Free Datasheet http://www.datasheet4u.com/ ...