Laser Diode
RLT808-10MG
ABSOLUTE MAXIMUM RATINGS ( Tc=25 oC ) DESCRIPTION Features
• • • • • Optical Power (mW)
Operation Temperatur...
Description
RLT808-10MG
ABSOLUTE MAXIMUM RATINGS ( Tc=25 oC ) DESCRIPTION Features
Optical Power (mW)
Operation Temperature (oC) Storage Temperature (oC) LD Reverse Voltage (V) PD Reverse Voltage (V)
SYMBOL
Po Top Tstg VLDR VPDR
RATED VALUE
10 -10 to +50 -40 to +85 2 30
Index Guided MQW Structure Wavelength : 808 nm (Typ.) Optical Power : 10 mW CW Threshold Current : 30 mA ( Typ. ) Package Style : TO-18 (5.6 mmØ)
OPTICAL AND ELECTRICAL CHARACTERISTICS ( Tc=25 oC ) DESCRIPTION
Lasing Wavelength (nm)
Threshold Current (mA) Operating Current (mA) Operating Voltage (V) Monitor Current (mA)
SYMBOL
λp Ith Iop Vop Im η θ⎪⎢ θ⊥ As
MIN.
803 20 30 1.8 0.1 0.5 8 25 *
TYPICAL
808 30 50 2.0 0.4 0.7 10 30 11
MAX.
815 50 70 2.5 0.9 0.9 12 40 *
TEST CONDITION
Po=10mW Po=10mW Po=10mW Po=10mW
Po=10mW, VR=5V
Slope Efficiency (mW/mA)
Beam Divergence ⎪⎢ (°) Beam Divergence ⊥ (°) Astigmatism (μm)
*** Po=10mW Po=10mW
Po=10mW, NA=0.4
03.08.2010
rlt808_10mg.doc
Free Datasheet http://www.datasheet4u.com/
1 of 1
...
Similar Datasheet