2SB1116A

2SB1116A Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free -1 A, -80 V PNP Plastic Encapsulated Transistor FEATURES High Collector Power Dissipation Complementary to 2SD1616A G H TO-92 CLASSIFICATION OF hFE(1) Product-Rank Range 2SB1116A-L 135~270 2SB1116A-K 200~400 2SB1116A-U 300~600 K A 1Emitter 2Collector 3Base J D REF. Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 B E C F A B C D E F G H J K Collector 2 3 Base 1 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Rating -80 -60 -6 -1 0.75 150, -55~150 Unit V V V A W ° C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Base to Emitter voltage Collector-Base Capacitance Transition Frequency Turn-on time Storage time Fall time http://www.SeCoSGmbH.com/ Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE (1) hFE (2) VCE(sat) VBE(sat) VBE Ccb fT TON TS TF Min. -80 -60 -6 135 81 -0.6 70 - Typ. 25 0....