DMP58D0LFB

DMP58D0LFB P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS -50V RDS(ON) 8Ω @ VGS = -5V Package X1-DFN1006-3 ID TA = +25°C -310A Features Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected 1kV Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data Case: X1-DFN1006-3 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Weight: 0.001 grams (approximate) Applications DC-DC Converters Power management functions Battery Operated Systems and Solid-State Relays Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. Drain X1-DFN1006-3 S D G ESD PROTECTED Gate Bottom View Top View Pin-Out Gate Protection Diode Source Equivalent Circuit Ordering Information (Note 4) Part Number DMP58D0LFB-7 DMP58D0LFB-7B Notes: Case X1-DFN1006-3 X1-DFN1006-3 Packaging 3,000 / Tape & Reel 10,000 / Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com for more in...