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DMP58D0SV Dataheets PDF



Part Number DMP58D0SV
Manufacturers Diodes
Logo Diodes
Description DUAL P-CHANNEL TRANSISTOR
Datasheet DMP58D0SV DatasheetDMP58D0SV Datasheet (PDF)

DMP58D0SV DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • • Low On-Resistance ESD Protected Gate to 500V Low Input Capacitance Fast Switching Speed Lead Free By Design/RoHS Compliant (Note 3) “Green” Device (Note 4) Qualified to AEC-Q 101 Standards for High Reliability Mechanical Data • • • • • • • • SOT-563 D2 G1 S1 Case: SOT-563 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability C.

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DMP58D0SV DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • • Low On-Resistance ESD Protected Gate to 500V Low Input Capacitance Fast Switching Speed Lead Free By Design/RoHS Compliant (Note 3) “Green” Device (Note 4) Qualified to AEC-Q 101 Standards for High Reliability Mechanical Data • • • • • • • • SOT-563 D2 G1 S1 Case: SOT-563 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.006 grams (approximate) S2 G2 D1 ESD protected to 500V TOP VIEW TOP VIEW Internal Schematic Maximum Ratings @TA = 25°C unless otherwise specified Symbol VDSS VDGR VGSS ID Value -50 -50 ±20 -160 Units V V V mA Characteristic Drain-Source Voltage Drain-Gate Voltage (Note 1) Gate-Source Voltage Drain Current (Note 2) Continuous Continuous Thermal Characteristics @TA = 25°C unless otherwise specified Symbol PD RθJA TJ, TSTG Value 400 313 -55 to +150 Units mW °C/W °C Characteristic Total Power Dissipation (Note 2) Thermal Resistance, Junction to Ambient (Note 2) Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: @TA = 25°C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) gFS Ciss Coss Crss Min -50 ⎯ ⎯ -0.8 ⎯ 0.05 ⎯ ⎯ ⎯ Typ ⎯ ⎯ ⎯ ⎯ 6 ⎯ 27 4 1.4 Max ⎯ -1 ±5 -2.1 8 ⎯ ⎯ ⎯ ⎯ Unit V μA μA V Ω S pF pF pF Test Condition VGS = 0V, ID = -250μA VDS = -50V, VGS = 0V VGS = ±20V, VDS = 0V VDS = VGS, ID = -250μA VGS = -5V, ID = -0.100A VDS = -25V, ID = -0.1A VDS = -25V, VGS = 0V, f = 1.0MHz 1. RGS ≤ 20KΩ. 2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 3. No purposefully added lead. 4. Diodes Inc’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 5. Short duration pulse test used to minimize self-heating effect. DMP58D0SV Document number: DS31293 Rev. 4 - 2 1 of 5 www.diodes.com July 2009 © Diodes Incorporated Free Datasheet http://www.datasheet4u.com/ DMP58D0SV 0.50 0.4 -ID, DRAIN CURRENT (A) 0.40 VGS = -10V VGS = -4.5V 0.30 -ID, DRAIN CURRENT (A) 0.3 VGS = -5V TA = 25°C 0.2 T A = -55°C TA = 150°C T A = 85°C 0.20 0.1 0.10 VGS = -2.5V 0.00 VGS = -1.8V 0 0.5 1.5 2 2.5 3 3.5 4 4.5 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 1 5 0 1 1.5 2 2.5 3 3.5 4 -VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 4.5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) VGS = -5V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 10 100 VGS = -10V T A = 125°C TA = 150°C 10 TA = 85°C T A = 25°C T A = -55°C 1 0.001 1 0 0.1 0.15 0.2 0.25 0.3 -ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 0.05 0.01 0.1 -ID, DRAIN CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1 2.0 1.8 RDS(ON), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.6 1.4 1.2 1.0 0.8 0.6 -50 C, CAPACITANCE (pF) VGS = -10V ID = -250mA 30 Ciss 25 20 f = 1MHz VGS = 0V VGS = -5V ID = -100mA 15 10 Coss Crss 5 0 0 5 10 15 20 25 30 35 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 6 Typical Capacitance 40 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMP58D0SV Document number: DS31293 Rev. 4 - 2 2 of 5 www.diodes.com July 2009 © Diodes Incorporated Free Datasheet http://www.datasheet4u.com/ DMP58D0SV 1.8 -VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 -50 0.001 0.2 0.4 0.6 0.8 1 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 ID = -250µA 1 VGS = 0V -IS, SOURCE CURRENT (A) 0.1 TA = 150°C TA = 125°C TA = 85°C 0.01 T A = 25°C TA = -55°C -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 1 r(t), TRANSIENT THERMAL RESISTANCE D = 0.9 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 RθJA (t) = r(t) * RθJA RθJA = 313°C/W P(pk) D = 0.02 0.01 D = 0.01 D = 0.005 t1 D = Single Pulse t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t 1/t2 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 9 Transient Thermal Response 10 100 1,000 Ordering Information Part Number DMP58D0SV -7 Notes: (Note 6) Case SOT-563 Packaging 3000/Tape.


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