Document
DMP58D0SV
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
• • • • • • • Low On-Resistance ESD Protected Gate to 500V Low Input Capacitance Fast Switching Speed Lead Free By Design/RoHS Compliant (Note 3) “Green” Device (Note 4) Qualified to AEC-Q 101 Standards for High Reliability
Mechanical Data
• • • • • • • •
SOT-563
D2 G1 S1
Case: SOT-563 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.006 grams (approximate)
S2
G2
D1
ESD protected to 500V
TOP VIEW
TOP VIEW Internal Schematic
Maximum Ratings
@TA = 25°C unless otherwise specified Symbol VDSS VDGR VGSS ID Value -50 -50 ±20 -160 Units V V V mA
Characteristic Drain-Source Voltage Drain-Gate Voltage (Note 1) Gate-Source Voltage Drain Current (Note 2)
Continuous Continuous
Thermal Characteristics
@TA = 25°C unless otherwise specified Symbol PD RθJA TJ, TSTG Value 400 313 -55 to +150 Units mW °C/W °C
Characteristic Total Power Dissipation (Note 2) Thermal Resistance, Junction to Ambient (Note 2) Operating and Storage Temperature Range
Electrical Characteristics
Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance
Notes:
@TA = 25°C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) gFS Ciss Coss Crss Min -50 ⎯ ⎯ -0.8 ⎯ 0.05 ⎯ ⎯ ⎯ Typ ⎯ ⎯ ⎯ ⎯ 6 ⎯ 27 4 1.4 Max ⎯ -1 ±5 -2.1 8 ⎯ ⎯ ⎯ ⎯ Unit V μA μA V Ω S pF pF pF Test Condition VGS = 0V, ID = -250μA VDS = -50V, VGS = 0V VGS = ±20V, VDS = 0V VDS = VGS, ID = -250μA VGS = -5V, ID = -0.100A VDS = -25V, ID = -0.1A
VDS = -25V, VGS = 0V, f = 1.0MHz
1. RGS ≤ 20KΩ. 2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 3. No purposefully added lead. 4. Diodes Inc’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 5. Short duration pulse test used to minimize self-heating effect.
DMP58D0SV
Document number: DS31293 Rev. 4 - 2
1 of 5 www.diodes.com
July 2009
© Diodes Incorporated Free Datasheet http://www.datasheet4u.com/
DMP58D0SV
0.50
0.4
-ID, DRAIN CURRENT (A)
0.40
VGS = -10V VGS = -4.5V
0.30
-ID, DRAIN CURRENT (A)
0.3
VGS = -5V
TA = 25°C
0.2
T A = -55°C
TA = 150°C T A = 85°C
0.20
0.1
0.10
VGS = -2.5V
0.00
VGS = -1.8V
0
0.5
1.5 2 2.5 3 3.5 4 4.5 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics
1
5
0 1 1.5 2 2.5 3 3.5 4 -VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 4.5
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
VGS = -5V
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
10
100
VGS = -10V
T A = 125°C
TA = 150°C
10
TA = 85°C T A = 25°C
T A = -55°C
1 0.001
1 0 0.1 0.15 0.2 0.25 0.3 -ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 0.05
0.01 0.1 -ID, DRAIN CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage
1
2.0 1.8 RDS(ON), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.6 1.4 1.2 1.0 0.8 0.6 -50
C, CAPACITANCE (pF)
VGS = -10V ID = -250mA
30
Ciss
25
20
f = 1MHz VGS = 0V
VGS = -5V ID = -100mA
15
10
Coss Crss
5
0 0 5 10 15 20 25 30 35 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 6 Typical Capacitance 40
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature
DMP58D0SV
Document number: DS31293 Rev. 4 - 2
2 of 5 www.diodes.com
July 2009
© Diodes Incorporated Free Datasheet http://www.datasheet4u.com/
DMP58D0SV
1.8 -VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 -50 0.001 0.2 0.4 0.6 0.8 1 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2
ID = -250µA
1
VGS = 0V
-IS, SOURCE CURRENT (A)
0.1
TA = 150°C TA = 125°C TA = 85°C
0.01
T A = 25°C TA = -55°C
-25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature
1 r(t), TRANSIENT THERMAL RESISTANCE
D = 0.9 D = 0.5 D = 0.3
0.1
D = 0.1 D = 0.05 RθJA (t) = r(t) * RθJA RθJA = 313°C/W P(pk)
D = 0.02
0.01
D = 0.01 D = 0.005
t1
D = Single Pulse
t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t 1/t2
0.001 0.00001
0.0001
0.001
0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 9 Transient Thermal Response
10
100
1,000
Ordering Information
Part Number DMP58D0SV -7
Notes:
(Note 6) Case SOT-563 Packaging 3000/Tape.