DMP58D0SV
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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DMP58D0SV
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
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Features
Low On-Resistance ESD Protected Gate to 500V Low Input Capacitance Fast Switching Speed Lead Free By Design/RoHS Compliant (Note 3) “Green” Device (Note 4) Qualified to AEC-Q 101 Standards for High Reliability
Mechanical Data
SOT-563
D2 G1 S1
Case: SOT-563 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.006 grams (approximate)
S2
G2
D1
ESD protected to 500V
TOP VIEW
TOP VIEW Internal Schematic
Maximum Ratings
@TA = 25°C unless otherwise specified Symbol VDSS VDGR VGSS ID Value -50 -50 ±20 -160 Units V V V mA
Characteristic Drain-Source Voltage Drain-Gate Voltage (Note 1) Gate-Source Voltage Drain Current (Note 2)
Continuous Continuous
Thermal Characteristics
@TA = 25°C unless otherwise specified Symbol PD RθJA TJ, TSTG Value 400 313 -55 to +150 Units mW °C/W °C
Characteristic Total Power Dissipation (Note 2) Thermal Resistance, Junction to Ambient (Note 2) Operating and Storage Temperature Range
Electrical Characteristics
Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltag...