IRF6720S2TR1PBF

PD - 97315 IRF6720S2TRPbF IRF6720S2TR1PbF l l l l l l l l l RoHS Compliant Containing No Lead and Bromide  Low Profile (<0.7 mm) Dual Sided Cooling Compatible  Ultra Low Package Inductance Optimized for High Frequency Switching  Ideal for CPU Core DC-DC Converters Optimized for Control FET Application Compatible with existing Surface Mount Techniques  100% Rg tested Typical values (unless otherwise specified) DirectFET™ Power MOSFET ‚ RDS(on) Qgs2 0.9nC VDSS Qg tot VGS Qgd 2.8nC RDS(on) Qoss 5.1nC 30V max ±20V max 6.0mΩ@ 10V 9.8mΩ@ 4.5V Qrr 14nC Vgs(th) 2.0V 7.9nC Applicable DirectFET Outline and Substrate Outline  S1 M4 L4 L6 DirectFET™ ISOMETRIC S1 S2 SB M2 L8 Description The IRF6720S2PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6720S2PbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in switching losses...