Power MOSFET
PD - 96136
IRF6722MPbF IRF6722MTRPbF
RoHS Compliant Containing No Lead and Bromide Low Profile (<0.7 mm) l Dual Sided...
Description
PD - 96136
IRF6722MPbF IRF6722MTRPbF
RoHS Compliant Containing No Lead and Bromide Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for Control FET application l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques l 100% Rg tested
l l
Typical values (unless otherwise specified)
DirectFET Power MOSFET RDS(on) Qgs2
1.2nC
VDSS Qg
tot
VGS Qgd
4.3nC
RDS(on) Qoss
11nC
30V max ±20V max 4.7mΩ@ 10V 8.0mΩ@ 4.5V
Qrr
26nC
Vgs(th)
1.8V
11nC
MP
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MP
DirectFET ISOMETRIC
Description
The IRF6722MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6722MPbF balances both low resistance and low charge along with ultra low package indu...
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