2N3501CSM4

2N3501CSM4 MECHANICAL DATA Dimensions in mm (inches) HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS FEATURES 5.59 ± 0.13 (0.22 ± 0.005) 0.25 ± 0.03 (0.01 ± 0.001) 1.40 ± 0.15 (0.055 ± 0.006) SILICON PLANAR EPITAXIAL NPN TRANSISTOR HERMETIC CERAMIC SURFACE MOUNT PACKAGE CECC SCREENING OPTIONS 0.23 min. (0.009) 0.64 ± 0.08 (0.025 ± 0.003) 0.23 rad. (0.009) 3 2 1.27 ± 0.05 (0.05 ± 0.002) 3.81 ± 0.13 (0.15 ± 0.005) 4 1 SPACE QUALITY LEVELS OPTIONS HIGH VOLTAGE 1.02 ± 0.20 (0.04 ± 0.008) 2.03 ± 0.20 (0.08 ± 0.008) APPLICATIONS: LCC3 PACKAGE Underside View PAD 1 – Collector PAD 2 – N/C PAD 3 – Emitter PAD 4 – Base Hermetically sealed surface mount version of the popular 2N3501 for high reliability / space applications requiring small size and low weight devices. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD Tstg Rja Collector – Base Voltage Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IB = 0) Collector Current Total Device Dissipation TA = 25 °C Derate above 25°C Storage Temperature Thermal Resistance Junction to Ambient 150V 150V 6V 300mA 500mW 2.85mW / °C –65 to 200°C 350°C/W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail [email protected] Website http://www.semelab.co.uk Prelim. 12/98 2N3501CSM4 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter Test Condition...