Power MOSFET
PD - 96122
IRF6727MPbF IRF6727MTRPbF
l l l l l l l l l l
RoHS Compliant Containing No Lead and Bromide Low Profile (...
Description
PD - 96122
IRF6727MPbF IRF6727MTRPbF
l l l l l l l l l l
RoHS Compliant Containing No Lead and Bromide Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for both Sync.FET and some Control FET application Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques 100% Rg tested
Typical values (unless otherwise specified)
DirectFET Power MOSFET
RDS(on) RDS(on)
VDSS
VGS
30V max ±20V max 1.22mΩ@ 10V 1.84mΩ@ 4.5V
Qg
tot
Qgd
16nC
Qgs2
5.3nC
Qrr
45nC
Qoss
28nC
Vgs(th)
1.8V
49nC
MX
MT MP
DirectFET ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX
Description
The IRF6727MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6727MPbF balances both low resistance and low charge al...
Similar Datasheet