IRF6802SDTRPBF

IRF6802SDPbF IRF6802SDTRPbF Typical values (unless otherwise specified) RoHs Compliant Containing No Lead and Bromide  VDSS VGS RDS(on) RDS(on) l Low Profile (<0.7 mm) 25V max ±16V max 3.2m@ 10V 4.5m@ 4.5V l Dual Sided Cooling Compatible  l Low Package Inductance Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Optimized for High Frequency Switching  8.8nC 3.1nC 1.1nC 22nC 13nC 1.6V l Ideal for CPU Core DC-DC Converters l Optimized for Control FET socket of Sync. Buck Converter l Low Conduction and Switching Losses G G D D l Compatible with existing Surface Mount Techniques  S S l 100% Rg tested l PD - 97769 DirectFET®plus Power MOSFET ‚ SA Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST SA MQ MX MT MP MB DirectFET®plus ISOMETRIC Description The IRF6802SDTRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6802SDTRPbF has low gate resistance and low charge along wi...