Power MOSFET
PD-97634
l l l l l l l l l l
RoHS Compliant and Halogen Free Low Profile (<0.7 mm) Dual Sided Cooling Compatible U...
Description
PD-97634
l l l l l l l l l l
RoHS Compliant and Halogen Free Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for Control FET Application Compatible with existing Surface Mount Techniques 100% Rg tested Footprint compatible to DirectFET
Typical values (unless otherwise specified)
DirectFET®plus Power MOSFET VGS RDS(on)
Qgs2
1.4nC
IRF6811SPbF IRF6811STRPbF
RDS(on)
Qoss
11nC
VDSS
Qg
tot
25V max ±16V max 2.8mΩ @ 10V 4.1mΩ @ 4.5V
Qgd
4.2nC
Qrr
23nC
Vgs(th)
1.6V
11nC
D
G
S
D
SQ
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
ISOMETRIC
SQ
SX
ST
MQ
MX
MT
MP
Description
The IRF6811STRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET ® packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6811STRPbF has low gate resistance and low charge along with ultra low package inductance providi...
Similar Datasheet