IRF7907PBF

PD - 97066A IRF7907PbF HEXFET® Power MOSFET Applications l Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards, Game Consoles and Set-Top Box Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating l Improved Body Diode Reverse Recovery l 100% Tested for RG l Lead-Free VDSS 30V Q1 16.4m:@VGS = 10V Q2 11.8m:@VGS = 10V RDS(on) max ID 9.1A 11A   6   *   6   *  '   '   '   '  SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Q1 Max. 30 ± 20 9.1 7.3 76 2.0 1.3 0.016 Q2 Max. Units V c Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range 11 8.8 85 2.0 1.3 0.016 -55 to + 150 A W W/°C °C Thermal Resistance RθJL RθJA Parameter Junction-to-Drain Lead g Junction-to-Ambient fg Q1 Max. 42 62.5 Q2 Max. 42 62.5 Units °C/W www.irf.com 1 Free Datasheet07/09/08 http://www.datasheet4u.com/ IRF7907PbF BVDSS ∆ΒVDSS/∆TJ Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Q1&Q2 Q1 Q2 Q1 Q2 Min. 30 ––– ––– ––– ––– ––– ––– 1.35 ––– ––– ––– ––– ––– ––– 19 24 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––...