IRF9910

PD - 95869 IRF9910 HEXFET® Power MOSFET Applications l Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box VDSS 20V Q1 13.4m:@VGS = 10V Q2 9.3m:@VGS = 10V RDS(on) max ID 10A 12A Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating   6   *   6   *  '   '   '   '  SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 10 8.3 83 2.0 1.3 0.016 -55 to + 150 W/°C °C Q1 Max. 20 ± 20 Q2 Max. Units V 12 9.9 98 W A c Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Resistance Parameter RθJL RθJA Junction-to-Drain Lead Junction-to-Ambient Typ. ––– ––– Max. 20 62.5 Units °C/W fg Notes  through … are on page 10 www.irf.com 1 04/28/04 Free Datasheet http://www.datasheet4u.com/ IRF9910 Static @ T J = 25°C (unless otherwise specified) Parameter BV DSS ∆Β V DSS /∆TJ Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Q1&Q2 Q1 Q2 Q1 Q2 V GS(th) ∆ V GS(th)/∆TJ I DSS I GSS gfs Qg Q gs1 Q gs2 Q gd Q godr Q sw Q oss t d(on) tr t d(off) tf C iss C oss C rss Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Cur...